【公開日：2023.07.28】【最終更新日：2023.05.29】

課題データ / Project Data

課題番号 / Project Issue Number

22AT0019

利用課題名 / Title

オプトエレクトロニクス用途の鉛なしハイブリッドハライド半導体のポリハライド処理

利用した実施機関 / Support Institute

産業技術総合研究所 / AIST

機関外・機関内の利用 / External or Internal Use

内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-

【重要技術領域 / Important Technology Area】（主 / Main）その他/Others（副 / Sub）革新的なエネルギー変換を可能とするマテリアル/Materials enabling innovative energy conversion

キーワード / Keywords

ハイブリッドハライド半導体,ポリハライド処理,polyiodide-assisted method, hybrid halides, transition metals, iodination treatments

利用者と利用形態 / User and Support Type

利用者名（課題申請者）/ User Name (Project Applicant)

Turkevych Ivan

所属名 / Affiliation

産業技術総合研究所

共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes

ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes

利用形態 / Support Type

（主 / Main）機器利用/Equipment Utilization（副 / Sub）-

利用した主な設備 / Equipment Used in This Project

AT-004：電界放出形走査電子顕微鏡[S4800_FE-SEM]
AT-025：スパッタ成膜装置(芝浦）
AT-050：四探針プローブ抵抗測定装置
AT-065：顕微レーザーラマン分光装置(RAMAN)
AT-095：RF-DCスパッタ成膜装置（芝浦）

報告書データ / Report

概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)

　The purpose of this project was to use advantages of our previously discovered polyiodide-assisted method (Turkevych et.al., Nat. Nanotechnology 14, 2019, 57) for the fabrication of thin films of hybrid halides of various transition metals to study their optoelectronic properties.

実験 / Experimental

[NPF003]イオンコーター (FIB付帯) (2F)
[NPF004]電界放出形走査電子顕微鏡S4800FE-SEM
[NPF022]UVオゾンクリーナー
[NPF025]スパッタ成膜装置(芝浦)
[NPF045]触針式段差計
[NPF050]四探針プローブ抵抗測定装置
[NPF065]顕微レーザーラマン分光装置(RAMAN)
[NPF095]RF-DCスパッタ成膜装置(芝浦)

　Metal thin films were deposited by r.f. sputtering or thermal evaporation on glass substrates. The polyiodide-assisted and iodination treatments were conducted by spin-coating of 0.5M MAI₃ solution in isopropyl-alcohol (IPA) over the thin metal film and by annealing in iodine vapor at 30 ℃, respectively. 

結果と考察 / Results and Discussion

　We have found that the conversion of metal thin films to respective semiconducting halides by polyiodide-assisted method and/or iodination method is successful for pure Bi, and mixed Ag_0.5Bi_0.5 thin films, which resulted in their conversion into MA₃Bi₂I₉ iodobismuthate (indirect Eg=1.96 eV) and AgBiI₄ rudorffite (direct Eg=1.83 eV), respectively. We thoroughly investigated optoelectronic properties of Ag₃BiI₆, Ag₂BiI₅, AgBi₂I₇, Cu₂BiI₅, CuBiI₄, and found that all these compounds have direct bandgaps in the range of 1.8-1.86 eV. The polyiodide-assisted conversion experiments were conducted for Sn, Ti, Zr, Nb and W thin films. We observed no significant reaction between metals and spincoated MAI₃ polyiodide layers at normal condition. However, we believe that this synthetic route should be investigated more, as one of the possible obstacles that could prevent the reaction is formation of surface oxide layer upon contact of freshly deposited metal films with atmosphere. 

図・表・数式 / Figures, Tables and Equations

その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)

・謝辞 This work was partially supported by JSPS KAKENHI Grant No. 21K05250

成果発表・成果利用 / Publication and Patents

論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)

1. Ivan Turkevych, Polyiodide-assisted fabrication of hybrid perovskite thin films from lead nanolayers on flexible substrates, Japanese Journal of Applied Physics, 61, SE1006(2022).
   DOI: 10.35848/1347-4065/ac4ad9
   

口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.

1. I. Turkevyc, "Strategies for efficiency improvement of rudorffite solar cells", IV Moscow Autumn Perovskite Photovoltaics International Conference (MAPPIC-2022)（Moscow＋online）, September 21, 2022

特許 / Patents

特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件