【公開日：2024.07.25】【最終更新日：2024.07.24】
課題データ / Project Data
課題番号 / Project Issue Number
23RO0039
利用課題名 / Title
Research on High-Temperature Electronics based on 4H-SiC CMOS for Harsh Environment Applications
利用した実施機関 / Support Institute
広島大学 / Hiroshima Univ.
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed（副 / Sub）-
キーワード / Keywords
SiC MOSFET, High-Temperature, Amplifier,リソグラフィ/ Lithography,光リソグラフィ/ Photolithgraphy,先端半導体（超高集積回路）/ Advanced Semiconductor (Very Large Scale Integration)
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
Vuong Van Cuong
所属名 / Affiliation
広島大学ナノデバイス研究所
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
尾崎 大晟,平本 詩音,東 駿翔
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
水野 恭司
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
We have successfully fabricated integrated circuits based on 4H-SiC MOSFETs for high-temperature applications. The results show that, up to 500℃, the 4H-SiC MOSFET based amplifier still work properly.
実験 / Experimental
The integrated circuit based on 4H-SiC MOSFETs was fabricated on a 4H-SiC p-type (0001) 4º-off substrate. During the fabrication process, the MLA150 maskless system from Heidelberg was employed to form the pattern on the surface of the SiC substrate. After the fabrication process, the SiC devices were characterized by using an Agilent 4156C Semiconductor parameter analyzer.
結果と考察 / Results and Discussion
Fig.1 shows a group of 4H-SiC MOSFETs after the fabrication process. The results show that, at temperature of up to 500℃, the 4H-SiC MOSFET still works well. The high-temperature stability of 4H-SiC accounts for successful operation of the amplifier based on 4H-SiC MOSFET when operating at 500℃.
図・表・数式 / Figures, Tables and Equations
Fig. 1 Microphotograph of a group of 4H-SiC MOSFETs after the fabrication process.
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
-
Vuong Van Cuong, Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model, Japanese Journal of Applied Physics, 63, 015503(2024).
DOI: 10.35848/1347-4065/ad169b
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
- Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda and Shin-Ichiro Kuroki, High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model, We.B.13, ICSCRM 2023.September 20th
- Taisei Ozaki, Vuong Van Cuong, Akinori Takeyama, Takeshi Ohshima, Kazutoshi Kojima, Yasunori Tanaka and Shin-Ichiro Kuroki, Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment, Th.A.8, ICSCRM 2023. September 21st
- Shion Hiramoto, Vuong Van Cuong, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda and Shin-Ichiro Kuroki, 500°C High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs, Th.A.17, ICSCRM 2023.September 21st
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件