【公開日：2024.07.25】【最終更新日：2024.06.25】

課題データ / Project Data

課題番号 / Project Issue Number

23SH0013

利用課題名 / Title

Development of compound semiconductor-based electric devices

利用した実施機関 / Support Institute

信州大学 / Shinshu Univ.

機関外・機関内の利用 / External or Internal Use

外部利用/External Use

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】（主 / Main）物質・材料合成プロセス/Molecule & Material Synthesis（副 / Sub）-

【重要技術領域 / Important Technology Area】（主 / Main）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed（副 / Sub）-

キーワード / Keywords

エレクトロデバイス/ Electronic device

利用者と利用形態 / User and Support Type

利用者名（課題申請者）/ User Name (Project Applicant)

Shaibal Mukherjee

所属名 / Affiliation

Indian Institute of Technology Indore(IITI)

共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes

ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes

Myo Than Htay Yamamoto

利用形態 / Support Type

（主 / Main）共同研究/Joint Research（副 / Sub）-

利用した主な設備 / Equipment Used in This Project

SH-001：ダブル球面収差補正付透過型電子顕微鏡
SH-002：走査型透過電子顕微鏡
SH-003：原子分解能分析電子顕微鏡
SH-004：光電子分光装置
SH-006：飛行時間型二次イオン質量分析装置

報告書データ / Report

概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)

In this joint research, we focused on two different topics. In the first one, we investigated the impact of symmetric and asymmetric electrodes on the resistive switching behavior of the nanoscale Y₂O₃-based memristor by means of physical electrothermal modelling as well as experiments. In the second topic, we studied the impact of substrate temperature (from room temperature to 300℃) on the structural, optical, and electrical properties of dual ion beam sputtering grown Sb₂S₃ thin films for photovoltaic application.

実験 / Experimental

The following facilities of Shinshu University such as high-resolution TEM (JOEL JEM2100F), scanning TEM (Hitachi HD2300A), atomic-resolution analytical electron microscope (JOEL JEM-ARM200F NEOARM), X-ray photoelectron spectroscopy (Ulvac Phi Quantera II), and time of flight secondary ion mass spectroscopy (TOF.SIMS5-ADSD-100) were utilized for the detailed analyses of the devices, which were fabricated at the Indian Institute of Technology Indore (IITI) by dual ion beam sputtering(DIBS) technique. To analyze the switching states of memristor by means of physical electrothermal modelling, the COMSOL Multiphysics software with a defined MATLAB script was used. Furthermore, to estimate the performance parameters of Sb₂S₃ solar cell, simulations are implemented using SCAPS (version 3.3.10).

結果と考察 / Results and Discussion

Investigation of electrode impact on the resistive switching behavior of the nanoscale Y₂O₃-based memristor
The simulated results exhibit a stable pinched hysteresis loop in the resistive switching (RS) responses either in symmetric or asymmetric electrode combinations with an efficient ON/OFF current ratio and show a close match with the experimental results. Moreover, the simulated devices show synaptic plasticity functionalities in terms of potentiation and depression processes with an almost ideal linearity factor for both electrode combinations similar to the realistic experimental data. This result efficiently depicts the suitability of the electrode material under this study with the Y₂O₃ switching layer to enhance electrical performance to integrate into the artificial synapse and neuromorphic computations.
Study of the substrate temperature impact on the Sb₂S₃ thin films for photovoltaic application
X-ray diffraction investigation demonstrates the high crystalline quality of the Sb₂S₃ thin films, revealing an orthorhombic structure with a characteristic diffraction peak corresponding to (211) plane observed at 28.4°. The field-emission　scanning electron microscopy images illustrate that the growth of thin film at 200℃ yields the largest grain size, measuring 62 nm, along with homogeneous and distinct grain morphology. In-depth optical analysis using spectroscopic ellipsometry with a three-layer model fitting technique indicates a high absorption coefficient (10⁵ cm^-1) in the UV–VIS spectral region, while the films exhibit direct bandgap values ranging from 1.6 to 2.3 eV. The electrical resistivity and mobility of the Sb₂S₃ films are evaluated at RT through four-probe Hall measurements, confirming the stable, repeatable, and reliable p-type electrical conductivity. In addition, the analysis of the p-Sb₂S₃/n-Si junction demonstrates an exceptional rectification ratio of 100 at ±1 V. Furthermore, the experimental results are incorporated into the modeling and numerical analysis of Sb₂S₃ heterojunction solar cells using the solar cell capacitance simulator (SCAPS) software. This analysis has identified the optimal thickness for the Sb₂S₃ absorber layer to be 1.5 μm, resulting in the highest efficiency of 16.39% along with open-circuit voltage of 0.949 V, short-circuit current of 24.73 mA/cm², and fill factor of 69.81%.

図・表・数式 / Figures, Tables and Equations

その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)

成果発表・成果利用 / Publication and Patents

論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)

1. Mayank Dubey, Realization of High Photovoltaic Efficiency Devices With Sb₂S₃ Absorber Layer, IEEE Transactions on Electron Devices, 71, 1115-1121(2024).
   DOI: 10.1109/TED.2023.3346852
   
2. Mohit Kumar Gautam, Experimental Validation of Switching Dependence of Nanoscale Y₂O₃ Memristors on Electrode Symmetry via Physical Electrothermal Modeling, ACS Applied Electronic Materials, 5, 3885-3893(2023).
   DOI: 10.1021/acsaelm.3c00598
   

口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.

1. Mayank Dubey, Chandrabhan Patel, Sumit Chaudhary, Myo Than Htay, Shaibal Mukherjee, Morphological and quantum analysis of Cu2SnGe(S,Se)3 thin films for photovoltaic application, EMNANO2023, 2023. Jun. 6
2. Chandrabhan Patel, Kumari Jyoti, Mayank Dubey, Myo Than Htay, Shaibal Mukherjee, Novel 2D transition metal dichalcogenide based memory crossbar for real time image processing using conventional computing paradigm, EMNANO2023, 2023. Jun. 6

特許 / Patents

特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件