【公開日：2024.07.25】【最終更新日：2024.06.24】
課題データ / Project Data
課題番号 / Project Issue Number
23JI1053
利用課題名 / Title
Observation of atomic arrangement and stress distribution at the heterojunction interfaces
利用した実施機関 / Support Institute
北陸先端科学技術大学院大学 / JAIST
機関外・機関内の利用 / External or Internal Use
外部利用/External Use
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed（副 / Sub）量子・電子制御により革新的な機能を発現するマテリアル/Materials using quantum and electronic control to perform innovative functions
キーワード / Keywords
Superconducting materials; Surface and Interface; Scanning transmission electron microscopy,電子顕微鏡/ Electronic microscope,表面・界面・粒界制御/ Surface/interface/grain boundary control,高品質プロセス材料/技術/ High quality process materials/technique,超伝導/ Superconductivity
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
Jia Jiqiang
所属名 / Affiliation
Advanced Analysis and Testing Center, Xi'An University of Technology
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
Oshima Yoshifumi
利用形態 / Support Type
（主 / Main）技術補助/Technical Assistance（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
The purpose of this project is to investigate the crystal structure, atomic arrangement, and stress distribution of YBa2Cu3O7-δ/Nd1.85Ce0.05CuO4-x (YBCO/NCCO) and LaNiO3/SrTiO3 (LNO/STO) interfaces. Specifically, the atomic arrangement characteristic was observed using the spherical aberration corrected transmission electron microscope (STEM, JEM-ARM200F), and the stress distribution was studied via geometric phase analysis technology (GPA) method.
実験 / Experimental
Study on the atomic arrangement characteristic and stress distribution of hetero-structure interfaces using the STEM mode of ARM200F (Applied voltage is 200kV).
結果と考察 / Results and Discussion
Figs. 1(a)-(e) show the STEM images of the YBCO/NCCO heterostructure. It can be seen that the YBCO/NCCO structure showed good (00l)-orientation growth characteristics. Herein, Fig. 1(a) is the STEM image of the interface, and Figs. 1(b)-1(e) are the high-resolution images of YBCO, NCCO and their interface. Figs. 1(f)-1(h) show the electron energy loss spectrum (EELS) patterns of oxygen element located at points A-E in Fig. 1(a). It can be seen that the peak intensity at point B was slightly higher than that at point A (Fig. 1(f)), and the peak intensity at point B is slightly higher than that at point C (Fig. 1(g)), while the peak intensities at point C, D, and E in the NCCO sample were almost equal (Fig. 1(h)). The oxygen atoms in the Cu-O chains of YBCO are easy to detach from YBCO. Therefore, Figs. 1(f) and 1(g) indicate that the oxygen absence of the outer-layer YBCO is more severe than that of its inner layer. NCCO is not prone to oxygen deficiency, so the EELS peaks of oxygen element at different positions in NCCO lay are not significantly different (as shown in Fig. 1(h)). Furthermore, the interface strain of LaNiO3/SrTiO3 (LNO/STO) was analyzed using GPA method, where STO is a single crystal substrate and LNO is a thin film deposited by pulse laser deposition method. The test results are shown in Figs. 2(a)-(f). Fig. 2(a) is a high-resolution image of the LNO/STO interface. It can be seen that LNO had formed good epitaxial growth on STO. Figs. 2(b)-(d) show the Exx strain field of Fig. 2(a). The strain of LNO was higher than that of STO (Figs. 2(c) and 2(d) are the strain test at the white line area); Figs. 2(e) and 2(f) show the strain test of Eyy, demonstrating that the strain at LNO/STO interface is greater than other area due to lattice mismatch.
図・表・数式 / Figures, Tables and Equations
Fig. 1 STEM and EELS patterns of oxygen distribution in YBCO/NCCO structure
Fig. 2 Interface stress-strain of LaNiO3/SrTiO3 using GPA method.
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
I express my gratitude to the ARIM project for their support of my research, and extend my thanks to Professor Oshima Yoshifumi and JAIST for their valuable assistance.
(1) M.J. Hytch, E. Snoeck, R. Kilaas, Ultramicroscopy, 1998, 74: 131-146;
(2) Y.Y Zhu, C. Ophus, J. Ciston, H.Y. Wang, Acta Materialia, 2013, 61: 5646-5663.
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件