【公開日：2024.07.25】【最終更新日：2024.06.24】
課題データ / Project Data
課題番号 / Project Issue Number
23JI0010
利用課題名 / Title
Characterization and analyses on the charge orderings in quantum materials
利用した実施機関 / Support Institute
北陸先端科学技術大学院大学 / JAIST
機関外・機関内の利用 / External or Internal Use
外部利用/External Use
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）次世代ナノスケールマテリアル/Next-generation nanoscale materials（副 / Sub）量子・電子制御により革新的な機能を発現するマテリアル/Materials using quantum and electronic control to perform innovative functions
キーワード / Keywords
電子顕微鏡/ Electronic microscope
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
Cheng Shaobo
所属名 / Affiliation
School of Physics and Microelectronics, Zhengzhou University
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
大島 義文,麻生 浩平
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）,共同研究/Joint Research
利用した主な設備 / Equipment Used in This Project
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
Through high-throughput first-principles calculations of an inorganic materials database, potential candidates for new thermoelectric and superconducting materials with narrow band gaps and flat bands near the band edges were identified. Among the targeted compounds, synthesized SnBi2Se4 exhibited a narrow band gap of approximately 200 meV and a thermal conductivity of around 1 W·K−1·m−1 at ambient pressure, which shows SnBi2Se4 a good candidate for thermalelectric applications.
In this study, we use the advanced Transmission Electron Microscope ARM-200F installed in JAIST, to clarify the atomic scale structure of the SnBi2Se4.
実験 / Experimental
In this study, we use the advanced Transmission Electron Microscope ARM-200F installed in JAIST, to clarify the atomic scale structure of the SnBi2Se4. We have the TEM sample of the SnBi2Se4 and bring them to JAIST for high resolution TEM/STEM observation. We try to got the atomic resolution BF image and HAADF image of the SnBi2Se4 samples.
結果と考察 / Results and Discussion
SnBi2Se4 has been anticipated as a promising new contender for high performance thermoelectric and superconducting materials. Single crystals of SnBi2Se4 were grown by a melt and slow-cooling method. To further understand its atomic structure, we got the atomic resolution BF image and HAADF image of the SnBi2Se4 along the [001] and [-7 7 1] zone axis and corresponding FFT patterns. These images have provided us with atomic resolution insights into the SnBi2Se4 crystals along the [001] and [-7 7 1] zone axes, as well as their corresponding Fast Fourier Transform (FFT) patterns. According to the atomic resolution STEM images, we propoesed an atomic structure of the SnBi2Se4, which match our result well. The crystal structure of SnBi2Se4 is trigonal R-3m structure, the lattice constants is a = b = 4.188 Å and c = 39.46 Å. The BF and HAADF images of the SnBi2Se4 along the [-7 7 1] zone axis shows a cubic pattern, the coresponding atomic sturcture was shown in the inset of the pictures. On the other hand, the BF image of the SnBi2Se4 along the [001] zone axis shows a hexagonal pattern, with corresponding atomic sturcture shown in the inset of the figure. These findings contribute to a deeper understanding of the atomic-level behavior of SnBi2Se4, which will undoubtedly aid in refining and optimizing its potential applications in the field of thermoelectric and superconducting materials.
図・表・数式 / Figures, Tables and Equations
Fig. 1. BF images of SnBi2Se4 along the [-771] axis and corresponding structure model.
Fig. 2. BF images of SnBi2Se4 along the [001] axis and corresponding structure model.
Fig. 3, HAADF images of SnBi2Se4 along the [-771] axis.
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
we acknowledge the support of Prof. Yoshifumi Oshima, Assistant Professor Kohei ASO and other staff in JAIST who support our work.
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件