利用報告書 / User's Reports


【公開日:2024.07.25】【最終更新日:2024.07.08】

課題データ / Project Data

課題番号 / Project Issue Number

23TU0034

利用課題名 / Title

光通信用マイクロミラーデバイス/MEMS device development for optical communications

利用した実施機関 / Support Institute

東北大学 / Tohoku Univ.

機関外・機関内の利用 / External or Internal Use

内部利用(ARIM事業参画者以外)/Internal Use (by non ARIM members)

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】(主 / Main)加工・デバイスプロセス/Nanofabrication(副 / Sub)-

【重要技術領域 / Important Technology Area】(主 / Main)高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed(副 / Sub)-

キーワード / Keywords

CVD,光リソグラフィ/ Photolithgraphy,膜加工・エッチング/ Film processing/etching,高周波デバイス/ High frequency device,MEMS/NEMSデバイス/ MEMS/NEMS device,センサ/ Sensor,光デバイス/ Optical Device


利用者と利用形態 / User and Support Type

利用者名(課題申請者)/ User Name (Project Applicant)

田中 秀治

所属名 / Affiliation

東北大学大学院工学研究科

共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes

Bhardwaj Bishwajeet Singh,堀内 雄暉

ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes

森山 雅昭

利用形態 / Support Type

(主 / Main)機器利用/Equipment Utilization(副 / Sub)-


利用した主な設備 / Equipment Used in This Project

TU-058:マスクレスアライナ
TU-201:DeepRIE装置#1
TU-206:アルバックICP-RIE#2
TU-157:W-CVD
TU-314:熱電子SEM


報告書データ / Report

概要(目的・用途・実施内容)/ Abstract (Aim, Use Applications and Contents)

The purpose of our research is to develop compact and high-performance devices for optical communication applications. We do prototype research and development at Hands-on-Access Fabrication in the Jun-ichi Nishizawa Memorial Research Center, and we will analyze the optical and mechanical properties at the Graduate School of Engineering (Tohoku University). 

実験 / Experimental

In order to fabricate our prototype samples, we used maskless aligner, Ulvac ICP-RIE, Deep-RIE, Chemical dry etcher, and W-CVD. We fabricated our sample for connecting its two independent active layers (Si) by fabricating a via hole and filling it with tungsten. We examined fabricated microstructures using a scanning probe microscope and tested a variety of hole types with varying sizes and shapes. Furthermore, we optimized the tungsten thickness to fit our operation.

結果と考察 / Results and Discussion

After fabricating several shapes and sizes of via holes and tungsten deposition, we were able to connect two active layers of our MEMS device. Figure 1 illustrates fabricated shape of a test sample. The optimization and fabrication of other components of the device is under progress and after completing the fabrication, we will examine its optical and mechanical characteristics. 

図・表・数式 / Figures, Tables and Equations


Fig. 1 SEM image of cross-section of a test sample


その他・特記事項(参考文献・謝辞等) / Remarks(References and Acknowledgements)

None


成果発表・成果利用 / Publication and Patents

論文・プロシーディング(DOIのあるもの) / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents

特許出願件数 / Number of Patent Applications:0件
特許登録件数 / Number of Registered Patents:0件

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