【公開日：2024.07.25】【最終更新日：2024.06.29】
課題データ / Project Data
課題番号 / Project Issue Number
23UT0258
利用課題名 / Title
FN注入によるMOS界面劣化と低温MOSFET特性の関係
利用した実施機関 / Support Institute
東京大学 / Tokyo Univ.
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）量子・電子制御により革新的な機能を発現するマテリアル/Materials using quantum and electronic control to perform innovative functions（副 / Sub）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed
キーワード / Keywords
環境制御マニュアルプローバステーション,量子効果デバイス/ Quantum effect device,量子コンピューター/ Quantum computer
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
Jin Zhao
所属名 / Affiliation
東京大学 大学院工学系研究科
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
高木信一
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
For many specific problems, quantum computers have significant advantages over traditional computers, and the computing power of quantum computers mainly depends on the number of qubits. Qubits need to operate at extremely low temperatures and require corresponding conventional semiconductor circuits for read and write operations. However, currently, the models of semiconductor devices are mostly based on room temperature, lacking models at low temperatures. Connecting qubits that work at low temperatures to control circuits requires a large interconnection system, so current quantum computers are very large and bulky. It is crucial to further clarify the performance of CMOS at low temperatures. Our study focuses mainly on the reliability and mobility models of MOSFET at cryogenic temperatures. Through Fowler-Nordheim injection, on the one hand, the temperature dependence of interface state generation is determined and modeled, while on the other hand, by comparing the mobility before and after injection, the impact of Coulomb scattering on mobility can be separated, leading to a better understanding of the temperature dependence of Coulomb scattering. For the data measurements, we used the low temperature probe system CRX-4K provided by ARIM.
実験 / Experimental
【利用した主な装置】Environmental control manual prober station, low-temperature prober (CRX-4K)【実験方法】 By using CRX-4K, devices can be cooled to about 50K. Coupled with the semiconductor parameter analyzer B1500A, various physical characteristics of MOSFET at low temperatures can be precisely measured and analyzed. Moreover, this system has temperature control function, enabling to measure the temperature dependence of various parameters.
結果と考察 / Results and Discussion
By using the low-temperature probe system CRX-4K, partial characteristics such as Vg-Ig, Id-Vg, and Cgc-Vg under different temperatures have been obtained. Utilizing these data, the effective mobility of MOSFET can be calculated, and the reliability at low temperatures can also be possible to understood. Currently, theoretical calculations are underway, hoping to validate them with experimental data to construct a more accurate mobility model.
図・表・数式 / Figures, Tables and Equations
Fig. 1 Microscope photograph of a measured device
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
本研究の一部は、国立研究開発法人新エネルギー・産業技術総合開発機構(NEDO)の委託業務(JPNP16007)の支援により実施した。
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件