【公開日：2024.07.25】【最終更新日：2024.05.21】
課題データ / Project Data
課題番号 / Project Issue Number
23UT0190
利用課題名 / Title
極薄膜GeOI nMOSFETのキャリア輸送特性と性能向上に関する研究
利用した実施機関 / Support Institute
東京大学 / Tokyo Univ.
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed（副 / Sub）量子・電子制御により革新的な機能を発現するマテリアル/Materials using quantum and electronic control to perform innovative functions
キーワード / Keywords
環境制御マニュアルプローバステーション、,先端半導体（超高集積回路）/ Advanced Semiconductor (Very Large Scale Integration),原子薄膜/ Atomic thin film
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
韓 雪揚
所属名 / Affiliation
東京大学 大学院工学系研究科
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
高木信一
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
Due to aggressive device scaling, Si logic CMOS is approaching its physical limit. To achieve higher integration, Si FinFETs are expected to be replaced by stacked Gate-All-Around (GAA) nanosheets and 3D sequential CFETs, enabling the integration of hetero channel orientations and materials. Among potential materials, (111) Ge stands out as a promising choice for nMOSFETs due to its low in-plane effective mass and high quantization effective mass, particularly suitable for extremely-thin body (ETB) channels due to the suppression of surface roughness scattering. In this study, we propose a flipped Ge-on-Insulator (GOI) fabrication method to enhance the quality of ETB (111) GOI. The flipped (111) GOI nMOSFETs demonstrate significant performance improvements across a broad range of channel thicknesses compared to previous methodologies. Furthermore, we systematically investigate the carrier transport properties by measuring effective mobilities at various environmental temperatures using low-temperature prober systems provided by ARIM.
実験 / Experimental
【利用した主な装置】Environmental control manual prober station, low-temperature prober (CRX-4K)【実験方法】 Low-temperature prober (CRX-4K) is a functional system capable of adjusting the measurement environment temperature from 350K to below 50K. This system facilitates the differentiation of distinct scattering regimes in MOSFET devices through the manipulation of measurement temperatures.
結果と考察 / Results and Discussion
Through the utilization of a low-temperature prober, we have distinguished surface roughness scattering, phonon scattering, and Coulomb scattering in ETB (111) GOI nMOSFETs. We are currently studying the physical mechanisms underlying these scattering regimes in GOI nMOSFET devices and exploring strategies to enhance device performances.
図・表・数式 / Figures, Tables and Equations
Appearance of the low temperature prober (CRX-4K)
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
本研究の一部は、科学研究費補助金 (22H00208)の支援により実施した。
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
- X. Han, C.-T. Chen, K. Sumita, K. Toprasertpong, M. Takenaka, and S. Takagi, “Performance Enhancement of Extremely-thin Body (111) Ge-on-Insulator nMOSFETs by Using Flipped Substrate Process”, 第84回応用物理学会秋季学術講演会, 20a-A304-8, 熊本城ホール他, 2023年9月19-23日.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件