【公開日：2024.07.25】【最終更新日：2024.06.22】

課題データ / Project Data

課題番号 / Project Issue Number

23NU0236

利用課題名 / Title

Thermodynamics and Kinetics analysis involved design and fabrication of MoS2 film for electrocatalytic hydrogen evolution

利用した実施機関 / Support Institute

名古屋大学 / Nagoya Univ.

機関外・機関内の利用 / External or Internal Use

内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-

【重要技術領域 / Important Technology Area】（主 / Main）次世代ナノスケールマテリアル/Next-generation nanoscale materials（副 / Sub）-

キーワード / Keywords

X線回折/ X-ray diffraction,ナノシート/ Nanosheet

利用者と利用形態 / User and Support Type

利用者名（課題申請者）/ User Name (Project Applicant)

Chayanaphat Chokradjaroen

所属名 / Affiliation

名古屋大学大学院工学研究科

共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes

ZHU Zhunda,SATO Keisuke

ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes

KATO Takeshi,HIKAGE Tatsuo

利用形態 / Support Type

（主 / Main）機器利用/Equipment Utilization（副 / Sub）-

利用した主な設備 / Equipment Used in This Project

NU-203：薄膜X線回折装置

報告書データ / Report

概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)

Two-dimentional MoS₂ is a promising material in the semiconductor applications and HER application and is considered to be able to solve the present problems in Si. The crystallinity, orientation and thickness of the MoS₂ films can be checked by XRD so that high quality films can be synthesized.

実験 / Experimental

We measured normal out-of-plane XRD and GIXRD for our MoS₂ films that prepared by CVD and solution process, to check the film quality.

結果と考察 / Results and Discussion

As shown in Figure 1, after normal out-of-plane measurement, all the samples showed the (002) peak of MoS₂ at about 2theta=14degree, which means the MoS₂ had been successfully synthesized and the high crystallinity can also be confirmed. Also, different experimental conditions showed different peak intensity in this peak, which means the 2D and 3D growth percentage is different.[reference1]
For the GIXRD results, we hope the results can show more useful information from the films only, and the measurement conditions are under exploring

図・表・数式 / Figures, Tables and Equations

Figure1. XRD results of different MoS₂ films on SiO₂/Si substrate 

その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)

Reference1: Liu, Keng-Ku, et al. "Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates." Nano letters 12.3 (2012): 1538-1544.We would like to express our sincerely gratitude to Prof. Kato and Mr. Hikage for their kind and timely help every time when we use this equipment, and also for their discussion in my sample conditions when searching for the measurement conditions.

成果発表・成果利用 / Publication and Patents

論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)

口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.

1. Zhunda Zhu, Chayanaphat Chokradjaroen, Jiangqi Niu,Yasuyuki Sawada, Yuanyuan Liu, Nagahiro Saito, 'Instantaneous atomic ratio-controlled morphological evolution of Mo-S-O thin films synthesized by chemical vapor deposition' ICSE2023(Busan), Nov.18-24, 2023

特許 / Patents

特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件