【公開日：2023.07.31】【最終更新日：2023.05.30】
課題データ / Project Data
課題番号 / Project Issue Number
22UT0205
利用課題名 / Title
The thermal boundary conductance of wafer bonding
利用した実施機関 / Support Institute
東京大学 / Tokyo Univ.
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）革新的なエネルギー変換を可能とするマテリアル/Materials enabling innovative energy conversion（副 / Sub）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed
キーワード / Keywords
Wafer bonding, Thermal Management, Thermal Boundary conductance, Silicon-based materials and devices, Scanning transmission electron microscopy, Transmission electron microscopy,電子顕微鏡/Electron microscopy,集束イオンビーム/Focused ion beam,パワーエレクトロニクス/ Power electronics,パワーエレクトロニクス/ Power electronics
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
Guo Rulei
所属名 / Affiliation
東京大学
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
森田真理, 押川浩之
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）,技術補助/Technical Assistance
利用した主な設備 / Equipment Used in This Project
UT-152：CADデータ連動3次元機能融合デバイス評価用前処理システム
UT-005：原子分解能元素マッピング構造解析装置
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
Compared with silicon (Si) counterparts, silicon carbide (SiC) power electronic devices can have smaller size, lower losses, higher operating temperature, and higher operation frequency due to their unique properties like wide bandgap, high electric field breakdown strength, high saturated electron drift velocity, and high thermal conductivity [1,2]. For SiC power devices on Si substrate, the thermal boundary conductance (TBC) between SiC and Si plays an important role in its performance, reliability, and lifetime. Therefore, it is necessary to investigate the TBC of SiC-Si interface, for which there is limited publication. In this work, the wafer bonding method is used to bond SiC to Si directly. The time-domain thermoreflectance method is used to measure the SiC-Si TBC. With the developed mapping system, not only the value of TBC but also the spatial distribution of TBC was obtained, which provides more detailed and stochastic knowledge about thermal transport at the SiC-Si interface.
実験 / Experimental
A homemade time-domain thermoreflectance setup is used to measure the SiC-Si TBC. To get a clear understanding of the result, STEM is used to observe the fine image of the cross-section around the interface, as shown in Fig. 1.
結果と考察 / Results and Discussion
The TBC of the interface between Si and SiC is 206 ± 36 MW/m2K. This High TBC observed at the bonded SiC-Si interface will aid the efficient heat dissipation of SiC power devices. Besides, the presence of the fluctuation in the spatial distribution of the TBC indicates the superiority of TDTR mapping technic and the necessity in probing and controlling the interfacial spatial uniformity.
図・表・数式 / Figures, Tables and Equations
Fig. 1, Scanning transmission electron microscopy (STEM) image and energy dispersive spectrometer (EDS) analysis at the interface between the SiC and Si. a) Before annealing b) After annealing (750 ℃, a half hour)
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
[1] Suga, T et al. Jpn. J. Appl. Phys. 54-3(2015), 030214[2] Tong, QY et al. J. Electrochem. Soc. 142-1(1995), 232
I would like to thank Mari Morita and Hiroyuki Oshikawa from ARIM, who provided me with professional technical support and assistance in the operation of FIB, STEM, and TEM. This work was supported by "Advanced Research Infrastructure for Materials and Nanotechnology in Japan (ARIM)" of the Ministry of Education, Culture, Sports, Science and Technology (MEXT). Proposal Number JPMXP12yyxx1234.
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
- Rulei Guo, FengWen Mu, Bin Xu, Junichiro Shiomi, "SiC-Si接合界面での熱伝導のマッピング測定", 第59回日本伝熱シンポジウム, 令和4年5月18日
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件