【公開日：2023.07.31】【最終更新日：2024.06.25】
課題データ / Project Data
課題番号 / Project Issue Number
22IT0009
利用課題名 / Title
無機材料ナノポアを用いた単鎖DNAシーケンサーの製作
利用した実施機関 / Support Institute
東京工業大学 / Tokyo Tech.
機関外・機関内の利用 / External or Internal Use
外部利用/External Use
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）量子・電子制御により革新的な機能を発現するマテリアル/Materials using quantum and electronic control to perform innovative functions（副 / Sub）-
キーワード / Keywords
リソグラフィ・露光・描画装置, ナノ細孔アレイ, DNAシーケンサー
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
徐 偉倫
所属名 / Affiliation
東京大学工学系研究科機械工学専攻
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）技術代行/Technology Substitution（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
IT-001：電子ビーム露光装置
IT-002：電子ビーム露光データ加工ソフトウェア
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
In this program, high-resolution e-beam (EB) lithography is used for the fabrication of nanopore arrays on ultrathin inorganic membranes for high throughput, which is a critical step for the experiment for the development of high-resolution solid-state nanopore systems for molecule sensing applications. The experimental results could be also useful for the development of nano-pumping technology. The chips with inorganic (SiN) membrane are bought from Alliance Biosystems (model No.: SN200-A30Q33), on which there are nine windows (area of 100 μm × 100 μm for each window) covered with 30 nm-thick SiN membrane. On each window, a nanopore array (1,444 nanopores with a diameter of 66 nm) is going to be fabricated by EB lithography.
実験 / Experimental
【実験方法】
1. Make the lithography pattern (pore number 40 × 40,
diameter 60 nm, spacing 600 nm)
2. Clean the chips, then glue the chip to a wafer (15
mm × 15 mm) with adhesive PMGI SF6.
3. Resist coating: Spin-coat a 100 nm-thick layer of
electron sensitive resist PMMA (1:2) (170 °C, 20 min) on
top of the chip.
4. EB exposure (pretest on Si): Pattern the layer by
exposing the resist with electron bundle (100 keV, 100 pA, dose: 550–650 μC/cm2)
from the EB pattern generator on Si to decide the does for SiN membrane.
5. EB exposure (on SiN membrane): Pattern the layer by
exposing the resist with electron bundle (100 keV, 100 pA, dose: 650 μC/cm2)
on SiN membrane.
6. Development: Develop the PMMA in a 1:3 mixture of
MIBK for 1 min and IPA for 45 s.
結果と考察 / Results and Discussion
Fig. 1 shows the chip coated with PMMA on a wafer. Fig. 2 shows an EB exposure result of nanopore array on Si. This step is a testing step, the purpose of which is to determine the exposure parameters that should be used on the SiN membrane. The test results are shown in Fig. 3, where the pore diameters can be influenced by the pre-set diameter in the lithography pattern and the does. From Fig. 3, it is decided to use dose of 650 μC/cm2 and the pre-set diameter of 60 nm on SiN membrane. Fig. 4 shows the SEM photo of the pore array on SiN membranes. Fig. 5 shows the SEM photo of a typical pore, whose diameter is 115 nm.
図・表・数式 / Figures, Tables and Equations
Fig.
1 The chip coated with PMMA on a wafer.
Fig.
2 The EB exposure of nanopore array on Si.
Fig. 3 The difference between the pore diameter after
EB exposure and the target diameter. Dose: 550 (green), 600 (red), and 650
(blue) μC/cm2 for each group. The pore
diameters set in every group are 60, 65, and 70 nm, respectively (No.7 is
broken).
Fig.
4 The SEM photo of pore array on SiN membrane. (Dose: 650 μC/cm2)
Fig.
5 The SEM photo of a typical pore on SiN membrane, of which the diameter is 115
nm.
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
なし。
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件