【公開日：2023.07.28】【最終更新日：2023.05.17】
課題データ / Project Data
課題番号 / Project Issue Number
22BA0042
利用課題名 / Title
TEM sample preparation of Pt/a-Si/c-Si structure by FIB
利用した実施機関 / Support Institute
筑波大学
機関外・機関内の利用 / External or Internal Use
外部利用/External Use
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）その他/Others（副 / Sub）-
キーワード / Keywords
集束イオンビーム/Focused ion beam
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
Sijie Li
所属名 / Affiliation
物質・材料研究機構
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
Jinhua Ye
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）技術代行/Technology Substitution（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
To characterize the structure stability of Pt/a-Si/c-Si interfacial structure after the photoelectrochemical test, the FIB-SEM (Helios NanoLab 600i) equipment of University of Tsukuba was utilized to prepare the corresponding cross-sectional view of the TEM sample.
実験 / Experimental
The preparation of sample: the cleaned single crystal Si (c-Si) wafer (0.5 mm thickness, 1 cm2 area) is put into the Na2PtCl6 and NH4F mixture solution for the redox reaction. After the reaction, Pt nanoparticles were in-situ reduced and deposited on the surface of the c-Si wafer, and the interlayer of amorphous Si (a-Si) was formed simultaneously, which form the interfacial structure of Pt/a-Si/c-Si.
結果と考察 / Results and Discussion
A hierarchical Pt/a-Si/c-Si sample consisting of three layers was formed. The previous TEM-charactered cross-sectional views effectively demonstrated the successful formation of this structure. Since the as-prepared Pt/a-Si/c-Si sample acts as a photoelectrode for photoelectrochemical application, we want to characterize the structure stability of Pt/a-Si/c-Si after the photoelectrochemical test via the cross-section view of TEM. Therefore, the TEM sample of Pt/a-Si/c-Si structure prepared by FIB-SEM (Helios NanoLab 600i) were successfully completed, which laid the foundation for the subsequent TEM observation.
図・表・数式 / Figures, Tables and Equations
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
-
Sijie Li, One-step construction of buried a-Si/c-Si junction photocathodes for boosting photoelectrochemical hydrogen production, Chemical Engineering Journal, 455, 140898(2023).
DOI: 10.1016/j.cej.2022.140898
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件