【公開日：2023.07.28】【最終更新日：2023.05.17】

課題データ / Project Data

課題番号 / Project Issue Number

22BA0042

利用課題名 / Title

TEM sample preparation of Pt/a-Si/c-Si structure by FIB

利用した実施機関 / Support Institute

筑波大学 / Tsukuba Univ.

機関外・機関内の利用 / External or Internal Use

外部利用/External Use

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-

【重要技術領域 / Important Technology Area】（主 / Main）その他/Others（副 / Sub）-

キーワード / Keywords

集束イオンビーム/Focused ion beam

利用者と利用形態 / User and Support Type

利用者名（課題申請者）/ User Name (Project Applicant)

Sijie Li

所属名 / Affiliation

物質・材料研究機構

共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes

Jinhua Ye

ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes

利用形態 / Support Type

（主 / Main）技術代行/Technology Substitution（副 / Sub）-

利用した主な設備 / Equipment Used in This Project

BA-003：FIB-SEM

報告書データ / Report

概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)

To characterize the structure stability of Pt/a-Si/c-Si interfacial structure after the photoelectrochemical test, the FIB-SEM (Helios NanoLab 600i) equipment of University of Tsukuba was utilized to prepare the corresponding cross-sectional view of the TEM sample.

実験 / Experimental

The preparation of sample: the cleaned single crystal Si (c-Si) wafer (0.5 mm thickness, 1 cm² area) is put into the Na₂PtCl₆ and NH₄F mixture solution for the redox reaction. After the reaction, Pt nanoparticles were in-situ reduced and deposited on the surface of the c-Si wafer, and the interlayer of amorphous Si (a-Si) was formed simultaneously, which form the interfacial structure of Pt/a-Si/c-Si. 

結果と考察 / Results and Discussion

A hierarchical Pt/a-Si/c-Si sample consisting of three layers was formed. The previous TEM-charactered cross-sectional views effectively demonstrated the successful formation of this structure. Since the as-prepared Pt/a-Si/c-Si sample acts as a photoelectrode for photoelectrochemical application, we want to characterize the structure stability of Pt/a-Si/c-Si after the photoelectrochemical test via the cross-section view of TEM. Therefore, the TEM sample of Pt/a-Si/c-Si structure prepared by FIB-SEM (Helios NanoLab 600i) were successfully completed, which laid the foundation for the subsequent TEM observation.

図・表・数式 / Figures, Tables and Equations

その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)

成果発表・成果利用 / Publication and Patents

論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)

1. Sijie Li, One-step construction of buried a-Si/c-Si junction photocathodes for boosting photoelectrochemical hydrogen production, Chemical Engineering Journal, 455, 140898(2023).
   DOI: 10.1016/j.cej.2022.140898
   

口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.

特許 / Patents

特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件