【公開日：2023.08.01】【最終更新日：2023.05.19】

課題データ / Project Data

課題番号 / Project Issue Number

22RO0029

利用課題名 / Title

Study on poly-Si thin films

利用した実施機関 / Support Institute

広島大学 / Hiroshima Univ.

機関外・機関内の利用 / External or Internal Use

内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-

【重要技術領域 / Important Technology Area】（主 / Main）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed（副 / Sub）-

キーワード / Keywords

Photolithography, Film Processing/Etching,リソグラフィ/Lithography,リソグラフィ/Lithography

利用者と利用形態 / User and Support Type

利用者名（課題申請者）/ User Name (Project Applicant)

THUY NGUYEN THI

所属名 / Affiliation

広島大学 ナノデバイス研究所

共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes

ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes

利用形態 / Support Type

（主 / Main）機器利用/Equipment Utilization（副 / Sub）-

利用した主な設備 / Equipment Used in This Project

RO-113： マスクレス露光装置

報告書データ / Report

概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)

Photolithography was applied to pattern the amorphous Si thin film with the holes to control the void defects in the laser-crystallized Si thin films and to form predefined single-crystal grains.

実験 / Experimental

After the a-Si thin film was coated with a photoresist, it was exposed by MLA 150 with a designed layout, then the exposed resist areas were removed by the developer. The cap SiO₂ layer and a-Si thin film were etched by BHF and TMAH.

結果と考察 / Results and Discussion

 -Our a-Si thin films were patterned with rectangular holes. The designed rectangular holes have a width of 200, 500 nm, 1 µm, and 2 µm. The Si channels were formed between these holes, or the Si islands were surrounded by these holes. These Si channels and Si islands had a length of 10 µm. The microphotograph of the patterned Si thin films shows that the holes of above 500 nm width were patterned well, however, the holes below 500 nm width were ununiformly patterned.

図・表・数式 / Figures, Tables and Equations

その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)

成果発表・成果利用 / Publication and Patents

論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)

口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.

特許 / Patents

特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件