【公開日：2023.08.01】【最終更新日：2023.05.29】
課題データ / Project Data
課題番号 / Project Issue Number
22NU0228
利用課題名 / Title
新規プラズマ照射技術を適用した半導体微細加工プロセスの開発
利用した実施機関 / Support Institute
名古屋大学 / Nagoya Univ.
機関外・機関内の利用 / External or Internal Use
外部利用/External Use
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）革新的なエネルギー変換を可能とするマテリアル/Materials enabling innovative energy conversion（副 / Sub）-
キーワード / Keywords
Lasing,スパッタリング/Sputtering
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
Shi Quan
所属名 / Affiliation
自然科学研究機構 核融合科学研究所
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
Ohno Noriyasu,Kajita Shin
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
Making nanostructure on GaN surface by Ar plasma irradiation. Then test the random lasing performance of textured GaN. This time we use AFM to observe the modified surface of GaN
実験 / Experimental
In the experiment, Mg-doped (p-type) GaN templates (4.5±0.5 μm thickness on sapphire, MTK Co., Ltd) were pre-treated by argon (Ar) plasma in a linear plasma device, Co-NAGDIS [1], to roughen the surface. Ar plasma with an electron density of ~1018m-3 was discharged by DC power. A RF power supply (13.56MHz), which connected to the substrate, was employed to provide the energy of etching. An optical microscope system is enmployed for the emission measurement from the GaN surface. The excitation source is a single transverse laser with a wavelength of 355 nm, a pulse width of 0.3 ns, and a repetition rate of 1 kHz.
結果と考察 / Results and Discussion
After the
plasma irradiation, surface of GaN was modified as shown in Fig. 1. Based on
the GaN surface roughness, we have demonstrated random laser action in the UV
region under photoexcitation. The lowest threshold (0.06 J/cm2) for random
lasing was observed where the size of the structure is larger than 0.05 μm2, which
was formed under conditions with the least amount of deposition. The
correlation between the submicro/nanosize structures generated by plasma
irradiation and lasing was evaluated in detail. The critical parameter to
optimize the random lasing was determined to be the size of structures that can
be modified by the Mo deposition rate. The results confirmed that the emission properties
can be controlled by the processing conditions.
図・表・数式 / Figures, Tables and Equations
Fig. 1 TEM observation of the cross-section of surface modified GaN after FIB cut.
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
Reference: [1] Q. Shi, S. Kajita, S. Feng, N. Ohno, “The dependence of Mo ratio on the formation of uniform black silicon by helium plasma irradiation,” J. Phys. D: Appl. Phys. 54, 405202 (2021).Collaborate with:Fujiwara Hideki in Hokkai-Gakuen University,Kajita Shin in the University of Tokyo. Ohno Noriyasu in Nagoya University.
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
-
Quan Shi, Structural Correlation of Random Lasing Performance in Plasma-Induced Surface-Modified Gallium Nitride, ACS Applied Optical Materials, 1, 412-420(2022).
DOI: https://doi.org/10.1021/acsaom.2c00085
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
- (1) Oral presentation on: CLEO-PR 2022, 31 July - 5 Augst, Sapporo, Japan
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件