【公開日：2024.07.25】【最終更新日：2024.06.29】
課題データ / Project Data
課題番号 / Project Issue Number
23UT0259
利用課題名 / Title
Dimensional control for WO3-based SERS applications
利用した実施機関 / Support Institute
東京大学 / Tokyo Univ.
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed（副 / Sub）次世代ナノスケールマテリアル/Next-generation nanoscale materials
キーワード / Keywords
エレクトロデバイス/ Electronic device,センサ/ Sensor,光デバイス/ Optical Device,X線回折/ X-ray diffraction,エリプソメトリ/ Ellipsometry,ナノシート/ Nanosheet
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
丁 彦
所属名 / Affiliation
東京大学 大学院工学系研究科
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）,技術補助/Technical Assistance
利用した主な設備 / Equipment Used in This Project
UT-202：高輝度In-plane型X線回折装置
UT-303：分光エリプソメータ
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
This experiment aimed to utilize X-ray reflectometry and ellipsometry to measure WO3 thin films, providing insights into their structure and properties. Through X-ray reflectometry, the reflectance of thin films was measured to determine their thickness . Additionally, ellipsometry was employed to measure the dielectric function of the films, studying their optical and electrical properties. The complementary nature of these techniques allowed for a comprehensive understanding of the microstructure and electromagnetic response of the thin films. The results obtained from these measurements provide valuable information for various applications in materials science and surface physics.
実験 / Experimental
X-ray Reflectometry Measurement:Preparation of thin film samples and fixing them onto the sample stage.Illumination of the samples with X-rays and recording the intensity of reflected light as a function of the incident angle.Analysis of the reflectance spectra data and determination of thin film thickness and interface structure parameters using model fitting techniques.Ellipsometry Measurement:Preparation of optical thin film samples and placing them on the sample stage of the ellipsometer.Adjustment of the optical path and detection parameters of the ellipsometer, recording the transmittance spectra and ellipsometric parameters of the samples.Analysis of the transmittance spectra and ellipsometric parameters, and calculation of the dielectric function of the thin films using appropriate model fitting techniques.
結果と考察 / Results and Discussion
Through X-ray reflectometry measurements, reflectance curves of the thin films as a function of incident angle were obtained, and the thin film thickness and interface structure parameters were determined.Using ellipsometry measurements, transmittance spectra and ellipsometric parameters of the thin films were obtained, and the dielectric function of the films was calculated.
図・表・数式 / Figures, Tables and Equations
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件