【公開日：2024.07.25】【最終更新日：2024.05.21】
課題データ / Project Data
課題番号 / Project Issue Number
23UT1186
利用課題名 / Title
ヘテロナノ材料の創成とデバイス応用
利用した実施機関 / Support Institute
東京大学 / Tokyo Univ.
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）計測・分析/Advanced Characterization
【重要技術領域 / Important Technology Area】（主 / Main）次世代ナノスケールマテリアル/Next-generation nanoscale materials（副 / Sub）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed
キーワード / Keywords
リソグラフィ/ Lithography,光リソグラフィ/ Photolithgraphy,膜加工・エッチング/ Film processing/etching,電子分光/ Electron spectroscopy,ナノチューブ/ Nanotube,高周波デバイス/ High frequency device,高品質プロセス材料/技術/ High quality process materials/technique,センサ/ Sensor,エレクトロデバイス/ Electronic device,光デバイス/ Optical Device,先端半導体（超高集積回路）/ Ascanced Semiconductor (Very Large Scale Integration)
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
千足 昇平
所属名 / Affiliation
東京大学工学部機械工学科
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
Weijie JIA,Waka Miyata,Hodaka Nishimura
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
UT-505：レーザー直接描画装置 DWL66+2018
UT-600：汎用ICPエッチング装置
UT-609：XeF2ドライエッチングシステム
UT-504：光リソグラフィ装置MA-6
UT-854：オージェ分光分析装置
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
This study aims to enhance the controlled synthesis of low-dimensional materials—specifically carbon (CNT), boron nitride (BNNT), and hexagonal boron nitride (h-BN)—through chemical vapor deposition (CVD) techniques. The unique feature lies in their ability to be combined via Van der Waals force, resulting in hetero structures, materials that exhibit novel properties. The objective is to investigate applications in electronics, sensors, and emerging technologies, capitalizing on the distinctive characteristics of these synthesized materials. Specifically, the research involves the direct synthesis of h-BN on CNT or surfaces to achieve a super-clean interface without contamination introduced during transfer processes. This heterostructure is then utilized in field-effect transistors (FET) and other applications.
実験 / Experimental
The heterostructure is synthesized via CVD and characterized using SEM, TEM, AES, and Raman spectroscopy. Following characterization, field-effect transistors (FETs) are fabricated using photolithography, ALD, sputtering, thermal evaporation, and RIE techniques. Electronic measurements are subsequently conducted to assess the performance of the fabricated devices.
結果と考察 / Results and Discussion
The fabrication of a field-effect transistor (FET) based on a CNT and h- heterostructure has been successfully achieved (Figure a). However, the ON current appears to be impacted by the strong interaction between CNT and quartz substrates. Additionally, the synthesis of h- on has been successful, as shown in Figure b, though there is potential for further enhancement in yield.
図・表・数式 / Figures, Tables and Equations
Figure a. SEM of fabricated CNT FET
Figure b. SEM and AES of grown h-BN on graphene
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
- 2023.05.25 *西村 帆貴，日下部 健太，金田 遼太郎，大塚 慶吾，井ノ上 泰輝，丸山 茂夫，千足 昇平, (D121) "無触媒CVDによるグラフェン・h-BN構造制御合成．"第60回日本伝熱シンポジウム (福岡国際会議場，福岡), oral
- 2023.09.04 *Y. Shimada, S. Nishida, T. Endo, R. Kaneda, H. Nishimura, K. Otsuka, S. Maruyama, S. Chiashi, (1-3) "Surfactant-free fabrication of CNT transparent conductive films on the liquid layer interface．" The 65th Fullerenes-Nanotubes-Graphene General Symposium (FNTG) (Kyushu University，Fukuoka, Japan), oral
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件