利用報告書 / User's Reports


【公開日:2024.07.25】【最終更新日:2024.03.27】

課題データ / Project Data

課題番号 / Project Issue Number

23KT1253

利用課題名 / Title

Fabrication and electro-mechanical study of nano-scale resonators

利用した実施機関 / Support Institute

京都大学 / Kyoto Univ.

機関外・機関内の利用 / External or Internal Use

内部利用(ARIM事業参画者以外)/Internal Use (by non ARIM members)

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】(主 / Main)加工・デバイスプロセス/Nanofabrication(副 / Sub)-

【重要技術領域 / Important Technology Area】(主 / Main)高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed(副 / Sub)マルチマテリアル化技術・次世代高分子マテリアル/Multi-material technologies / Next-generation high-molecular materials

キーワード / Keywords

Resonator, Nanomechanical engineering, Electron beam lithography.,MEMS/NEMSデバイス/ MEMS/NEMS device,蒸着・成膜/ Vapor deposition/film formation,電子線リソグラフィ/ EB lithography,膜加工・エッチング/ Film processing/etching,光リソグラフィ/ Photolithgraphy,3D積層技術/ 3D lamination technology


利用者と利用形態 / User and Support Type

利用者名(課題申請者)/ User Name (Project Applicant)

Yu Wei

所属名 / Affiliation

京都大学 大学院工学研究科

共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type

(主 / Main)機器利用/Equipment Utilization(副 / Sub),技術補助/Technical Assistance


利用した主な設備 / Equipment Used in This Project

KT-101:高速高精度電子ビーム描画装置
KT-103:レーザー直接描画装置
KT-203:電子線蒸着装置
KT-212:シリコン酸化膜犠牲層ドライエッチングシステム
KT-234:深堀りドライエッチング装置(1)


報告書データ / Report

概要(目的・用途・実施内容)/ Abstract (Aim, Use Applications and Contents)

Exploring the change of fundamental features during downsizing Si resonators is our main task. Nanomechanical resonators with 40nm nano-scale beams have been fabricated and characterized last year with the assistance of Nano-hub’s staffs. This year, we make an attempt to fabricate a thinner beam with a 10-20 nm width and obtain its resonance response

実験 / Experimental

The schematic of the fabricated device is shown as Fig.1. The fabrication is based on an SOI wafer of 7.5 µm device layer. Most of the processes were conducted in Nano-hub, namely, making photolithography masks for electrode patterning, metal deposition for electrodes, electron-beam lithography for nanobeam, Deep-RIE, and Vapor HF etching for releasing nanobeam.

結果と考察 / Results and Discussion

The nano-scale beam of 10-20 nm has been successfully patterned by electron-beam lithography and Deep-RIE results are also fine with modified recipe and etching cycles. The next challenge is to release such the thinnest beam and characterize its dynamic behavior. 

図・表・数式 / Figures, Tables and Equations


Fig.1 The schematic of the fabricated device


その他・特記事項(参考文献・謝辞等) / Remarks(References and Acknowledgements)


成果発表・成果利用 / Publication and Patents

論文・プロシーディング(DOIのあるもの) / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents

特許出願件数 / Number of Patent Applications:0件
特許登録件数 / Number of Registered Patents:0件

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