【公開日：2024.07.25】【最終更新日：2024.05.13】

課題データ / Project Data

課題番号 / Project Issue Number

23NM5306

利用課題名 / Title

CNT molecular junction devices

利用した実施機関 / Support Institute

物質・材料研究機構 / NIMS

機関外・機関内の利用 / External or Internal Use

内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）計測・分析/Advanced Characterization

【重要技術領域 / Important Technology Area】（主 / Main）量子・電子制御により革新的な機能を発現するマテリアル/Materials using quantum and electronic control to perform innovative functions（副 / Sub）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed

キーワード / Keywords

蒸着・成膜/ Vapor deposition/film formation,スパッタリング/ Sputtering,電子線リソグラフィ/ EB lithography,電子顕微鏡/ Electronic microscope,量子コンピューター/ Quantum computer,量子効果/ Quantum effect,高周波デバイス/ High frequency device,MEMS/NEMSデバイス/ MEMS/NEMS device,センサ/ Sensor,量子効果デバイス/ Quantum effect device

利用者と利用形態 / User and Support Type

利用者名（課題申請者）/ User Name (Project Applicant)

湯 代明

所属名 / Affiliation

物質・材料研究機構

共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes

ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes

利用形態 / Support Type

（主 / Main）機器利用/Equipment Utilization（副 / Sub）,技術相談/Technical Consultation

利用した主な設備 / Equipment Used in This Project

NM-641：スパッタ装置 [CFS-4EP-LL #2]
NM-635：電子ビーム描画装置 [ELS-BODEN100]

報告書データ / Report

概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)

The purpose is to fabricate suspended electrodes on the edge of microchips. The microchips are compatible with in situ TEM probing. Carbon nanotubes bridging the suspended electrodes will be modified by heating and electron irradiation to create quantum dots in the 1D nanotube. Because of the strong size confinement effects, it is expected that they will demonstrate quantum behaviors at near room temperature. 

実験 / Experimental

The complete fabrication included 3 rounds of lithography, deposition, and etching: (1) deposition of SiNx film on Si wafer and defining the Si thin window; (2) defining the electrode metal wires; (3) creation of suspended electrode by reactive ion etching.

結果と考察 / Results and Discussion

Up to now, the following steps were completed. SiNx film with the thickness of 100 nm was deposited on both sides of the Si wafer. We were able to confirm that a uniform thin film was sputtered on to the surface of a silicon wafer by carefully check the surface using an optical microscope.　On the second step, we carried out electron beam lithography (EBL) for nanotransistor electrodes. After finishing EBL, we developed the pattern and confirmed clear lines have been made on the surface.

図・表・数式 / Figures, Tables and Equations

その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)

成果発表・成果利用 / Publication and Patents

論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)

口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.

特許 / Patents

特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件