【公開日：2024.07.25】【最終更新日：2024.02.29】
課題データ / Project Data
課題番号 / Project Issue Number
23AT0088
利用課題名 / Title
Investigation of microstructure, composition and passivation performance of silicon nitride, silicon oxide, and titanium nitride thin films
利用した実施機関 / Support Institute
産業技術総合研究所 / AIST
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed（副 / Sub）-
キーワード / Keywords
Thin films, Ellipsometer, Chemical vapor deposition (CVD), Electron beam lithography, Plasma etching,エレクトロデバイス/ Electronic device,蒸着・成膜/ Vapor deposition/film formation,CVD,電子線リソグラフィ/ EB lithography,膜加工・エッチング/ Film processing/etching
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
陳 国海
所属名 / Affiliation
産業技術総合研究所
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
原 匡宏,椎名 理恵,西村 光佳,山田 真保,日置 清美,千葉 佐智子
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
赤松 雅洋,郭 哲維,川又 彰夫
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
AT-030：プラズマCVD薄膜堆積装置
AT-063：分光エリプソメータ
AT-082：化合物半導体エッチング装置（ICP-RIE）
AT-089：赤外線ランプ加熱炉（RTA）
AT-093：高速電子ビーム描画装置（エリオニクス）
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
Nano-sized patterns were formed by using electron beam lithography, followed by ICP-RIE plasma etching to form pillar nanostructures to be used as electrodes. Finally, a dielectric layer of silicon rich oxide was deposited to form the required structure.
実験 / Experimental
A
thin film of TiNx was prepared on Si substrate by sputtering using Ti target and
Ar/N2 gases. The negative electron beam resist of H-SiOx was
spin coated onto it. Then the samples were brought to NPF and Nano-sized resist patterns were formed by using electron
beam lithography. ICP-RIE was used to etch the TiNx film to form the nano-sized
pillar structures with desired edge profile. Last, a silicon oxide layer was
deposited using TEOS CVD to act as dielectric layer and followed a thermal
annealing process.
Some
of the conditions are listed below.
TEOS CVD: O2/TEOS=400/7
sccm, Pressure (67 Pa), RF (100 W), Temp (350 ℃), Time (7-12
min).
Thermal annealing: 30 min @ 400 ℃ in N2 environment.
結果と考察 / Results and Discussion
The fabrication process of nano-sized pillar
structures has been developed. We used H-SiOx negative resist and adjusted the condition
of e-beam lithography. A nice pattern can be obtained on the sputtered TiNx
film (Fig. 1 left). Previously we used HBr gas to plasma etch TiNx film and
unfortunately, the process was very unstable and difficult to control. After switching
to Cl2 gas, a desired nano-sized pillar structure was achieved with
good reproducibility (Fig. 1 right).
Then a silicon oxide
layer was deposited using TEOS CVD to act as dielectric layer. For the purpose
of sample mass production, we first checked the deposition uniformity on
various stage locations. Unfortunately, we observed slightly large thickness
variation (20 nm) within one run and batch-to-batch variation as well. Based on
the result of rate check, we were supposed to get 200 nm thick film.
On the contrary, the film thickness was significantly thicker, largely
different from the previous batch. In addition, within the same run, the thickness ranged
from 234 nm to 254 nm, also showing a very large variation from stage left to its right,
probably related to the gas flow direction.
Finally, the silicon oxide film was subjected to thermal annealing
to remove the possible H2O inside. Various thermal annealing
conditions were investigated, and the film properties were evaluated before and
after annealing, such as the refractive index n and film thickness (Fig. 3). The annealing
process was finally determined.
図・表・数式 / Figures, Tables and Equations
Fig. 1. Nano-sized structures after e-beam lithography (left) and ICP-RIE (right).
Fig. 2. Deposition variation of TEOS CVD on various stage locations.
Fig. 3. Thin film properties before and after thermal annealing: refractive index (left) and film thickness (right).
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
We greatly appreciate the technical support from NPF staff (Kaku Tetsui, Kawamata Akio, Akamatsu Masahiro, etc.)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件