【公開日：2024.07.25】【最終更新日：2024.05.09】
課題データ / Project Data
課題番号 / Project Issue Number
23UT1045
利用課題名 / Title
Large-scale photonic and plasmonic metasurfaces
利用した実施機関 / Support Institute
東京大学 / Tokyo Univ.
機関外・機関内の利用 / External or Internal Use
外部利用/External Use
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）計測・分析/Advanced Characterization
【重要技術領域 / Important Technology Area】（主 / Main）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed（副 / Sub）-
キーワード / Keywords
スパッタリング/ Sputtering,電子線リソグラフィ/ EB lithography,膜加工・エッチング/ Film processing/etching,流路デバイス/ Fluidec Device,電子顕微鏡/ Electronic microscope,フォトニクスデバイス/ Nanophotonics device,光デバイス/ Optical Device,メタマテリアル/ Metamaterial
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
何 亜倫
所属名 / Affiliation
国立研究開発法人物質・材料研究機構
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
UT-503：超高速大面積電子線描画装置
UT-600：汎用ICPエッチング装置
UT-855：高精細電子顕微鏡
UT-711：LL式高密度汎用スパッタリング装置(2019)
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
This project aims to leverage high large-area electron-beam lithography for the fabrication of metasurfaces at scales ranging from centimeters to wafers. The objective is to integrate these metasurfaces with microfluidic systems to enhance sensing capabilities and achieve high-throughput functionality. The utilization of ADVANTEST's high-speed electron-beam lithography, featuring projected electron beam exposure writing, stands out as an ideal solution. This equipment aligns perfectly with the project's demands, providing a balanced combination of high throughput and efficiency essential for the large-scale fabrication of metasurfaces.
実験 / Experimental
The initial step in this process involves the application of the F7000s electron-beam lithography for the fabrication of a grating and square-lattice periodic metasurface. This is achieved by utilizing positive ZEP520A resist, resulting in a resolution of 150 nm for the hole array structure. Following exposure and development, the resist pattern is transferred to a metal (Al or Cr) mask through a sputtering process or electron-gun evaporator deposition. To prepare the electron-beam pattern for injection molding, it is imperative to create a robust and high-aspect-ratio structure. For this purpose, an inductively coupled plasma reactive-ion-etching system (or a deep reactive ion etching system) is employed to etch the template, which is composed of silicon material. This meticulous process ensures the development of a template suitable for precision injection molding based on the electron-beam pattern.
結果と考察 / Results and Discussion
A notable achievement is made in this project, where a 2 cm by 2 cm electron-beam resist pattern is successfully created within just 90 minutes (Fig.1). The resolution capability of the character projection (CP) exposure method is a standout feature, allowing for resolutions as fine as 100 nm while maintaining an impressive throughput. Importantly, the CP exposure method demonstrates a writing speed two orders of magnitude faster than that of conventional direct exposure methods. Further, the fabrication of a high-aspect-ratio silicon nanostructure, measuring 300 nm in height and 100 nm in diameter, is realized through the application of an inductively coupled plasma reactive-ion-etching system. This intricate process employs a 30 nm thick aluminum metal mask to achieve precision and control, ensuring the creation of a Si nanostructure with the desired dimensions and characteristics.
図・表・数式 / Figures, Tables and Equations
Fig. 1. The image of the large-area photonic metasurface array. To display the patterns created by electron-beam lithography across the entire sample without cutting, a complete image of the lithographic pattern is provided instead of a SEM image. The chip size is 3 cm by 3 cm.
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件