【公開日：2024.08.20】【最終更新日：2024.06.20】
課題データ / Project Data
課題番号 / Project Issue Number
22KT1252
利用課題名 / Title
Fabrication and electro-mechanical study of nano-scale resonators
利用した実施機関 / Support Institute
京都大学 / Kyoto Univ.
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）マルチマテリアル化技術・次世代高分子マテリアル/Multi-material technologies / Next-generation high-molecular materials（副 / Sub）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed
キーワード / Keywords
Resonator, Nanomechanical engineering,リソグラフィ/Lithography,EB,3D積層技術/ 3D lamination technology
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
Banerjee Amit
所属名 / Affiliation
京都大学 大学院工学研究科
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
江崎裕子
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）,技術補助/Technical Assistance
利用した主な設備 / Equipment Used in This Project
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
In this research, our goal is to fabricate nanoscale resonator devices of Si to study their dynamic behavior, Q-factor, etc. for developing ultrasensitive gas-sensors. This research is done together with Wei Yu, Yuma Ohara and Tsubasa Suzuki. Each of their individual research and reports are separately provided. I provide mentorship to their efforts regarding concepts and designs of devices, fabrication process and optimizing process conditions. As far as my personal use of equipment in this issue, I used the critical point dryer to dry a few nanoresonator chips after acetone cleaning. Details of that experiment is provided below. For further detail about this research and achievements, I refer to the reports of the aforementioned student members of the project.
実験 / Experimental
We fabricate our nanoresonator devices from SOI wafers using UV and electron beam lithography, DRIE process and vapor HF etching. In some of our devices, due to over-etching in DRIE step, nanobeams were detached from the oxide layer. In the next step, when some of the chips were diced and protective photoresist layer was removed by acetone, nanobeams were damaged during drying. To overcome this issue, I used critical point drying (KT-117: Supercritical Rinser & Dryer) to dry the remaining chips after 15 minutes acetone cleaning.
結果と考察 / Results and Discussion
Chips were inspected under an optical microscope before and after the critical points drying process as shown in Fig. 1(a) and Fig. 1(b), respectively. In Fig. 1(a), photoresist (OFPR) coating is visible on the chip. Fig. 1(b) shows a chip after resist removal and drying process with intact nanobeams, indicating that the beams were successfully rescued.
図・表・数式 / Figures, Tables and Equations
Fig.1: Optical images of devices (a) before and (b) after critical point drying.
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
- 2022 JSME-IIP/ASME-ISPS Joint Conference on Micromechatronics for Information and Precision Equipment, Nagoya, Aug 2022
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件