【公開日：2023.07.31】【最終更新日：2023.05.25】
課題データ / Project Data
課題番号 / Project Issue Number
22UT1135
利用課題名 / Title
Hexagonal boron nitride as an ideal substrate for carbon nanotube photonics
利用した実施機関 / Support Institute
東京大学
機関外・機関内の利用 / External or Internal Use
外部利用/External Use
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）次世代ナノスケールマテリアル/Next-generation nanoscale materials（副 / Sub）量子・電子制御により革新的な機能を発現するマテリアル/Materials using quantum and electronic control to perform innovative functions
キーワード / Keywords
リソグラフィ/Lithography,EB,フォトニクス/ Photonics,ナノチューブ/ Nanotube
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
方 楠
所属名 / Affiliation
理化学研究所
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
UT-503：超高速大面積電子線描画装置
UT-604：高速シリコン深掘りエッチング装置
UT-900：ステルスダイサー
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
In this project, we demonstrate that h-BN is an ideal substrate for CNTs can could serve as an ideal nano-spacer for CNTs to couple with photonic crystals.
実験 / Experimental
We utilize the equipments UT-503, UT-604, and UT-900 to prepare the SiO2/Si substrate with the trenches for the growth of suspended CNTs. Having prepared the substrate, we conduct the following processes in RIKEN. We perform deterministic transfer of a CNT and h-BN by taking into account the spectral shifts of the CNT and the cavity modes in contact with h-BN. The fundamental mode of a test nanobeam cavity is redshifted by 27.6 nm after the transfer of an h-BN flake. Based on the shift amount, we seek a target nanobeam whose cavity mode under this particular h-BN flake would match the (13,5) tube emission on h-BN. We then prepare CNT/h-BN/cavity heterostructure based on the shifts.
結果と考察 / Results and Discussion
A PL spectrum of the CNT in Figure 1 has a cavity-coupled narrow line, exhibiting a nearly perfect spectral and spatial matching. Such a perfect matching is achieved since CNT above does not show a considerable quenching effect and is spectral stable without exhibiting any fluctuation over a long time. The successful demonstration of CNT/h-BN heterostructure indicates that other 2D materials such as WSe2 can also be transferred to interact with CNTs. In this heterostructure, novel excitonic physics could be expected.
図・表・数式 / Figures, Tables and Equations
Figure 1. (Top) Optical micrograph of a nanobeam cavity with h-BN above. Scale bar is 2 μm. (Bottom) PL spectrum of the cavity-coupled CNT on h-BN.
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio. Work supported in part by JSPS (KAKENHI JP19K23593, JP16H05962, JP19H00755), MIC (SCOPE 191503001), and MEXT (Nanotechnology Platform JPMXP09F19UT0075). Growth of hexagonal boron nitride crystals supported by the MEXT Element Strategy Initiative to Form Core Research Center, Grant Number JPMXP0112101001 and JST (CREST JPMJCR15F3). K. O. is supported by JSPS Research Fellowship. We acknowledge the Advanced Manufacturing Support Team at RIKEN and T. Nishimura for technical assistance.
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
-
Nan Fang, Quantization of Mode Shifts in Nanocavities Integrated with Atomically Thin Sheets, Advanced Optical Materials, 10, (2022).
DOI: 10.1002/adom.202200538
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件