【公開日：2023.07.31】【最終更新日：2023.05.23】
課題データ / Project Data
課題番号 / Project Issue Number
22UT1129
利用課題名 / Title
ホットエレクトロンを活用した光検出器の高高度化に関する研究
利用した実施機関 / Support Institute
東京大学
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）計測・分析/Advanced Characterization
【重要技術領域 / Important Technology Area】（主 / Main）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed（副 / Sub）-
キーワード / Keywords
光検出器,電子顕微鏡/Electron microscopy,スパッタリング/Sputtering,赤外・可視・紫外分光/Infrared and UV and visible light spectroscopy,EB,IoTセンサ/ IoT sensor
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
小西 邦昭
所属名 / Affiliation
東京大学
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
何亜倫
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
UT-503：超高速大面積電子線描画装置
UT-711：LL式高密度汎用スパッタリング装置(2019)
UT-855：高精細電子顕微鏡
UT-303：分光エリプソメータ
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
In this work, we propose and demonstrate optical cavity-coupled plasmonic hot-electron phototransistor and photoconductor at telecommunication region by utilizing organic semiconducting polymers. The plasmonic structures could promote the generation and interface-transition of hot carriers leading to the photodetection at subwavelength region of the organic semiconductors. The design of this plasmonic hot-electron optoelectronic devices take advantages of the strong surface plasmon resonance at specific wavelength of the plasmonic cavity and the simple method for organic semiconductor thin film coating, providing high spectral-selectivity photodetection.
実験 / Experimental
The optical cavity consisting a Ag mirror and Si3N4 layer is fabricated on the top of Si substrate by using CFS-4EP-LL !-Miller (SHIBAURA MECHATRONICS) LL式高密度汎用スパッタリング装置 (LL-type High-density General Purpose Sputtering System). The refractive index and the film thickness are confirmed by using M-2000U (J.A.Woollam) 分光エリプソメータ. After prepared the optical cavity, the plasmonic grating is patterned on the top of the Si3N4 layer by EB lithography F7000S-VD02 (ADVANTEST) 超高速大面積電子線描画装置 (Ultrarapid Electron Beam Direct Writing and Photo Mask Fabrication Machine) and sputtering/lift-off process. The mophology of the fabricated strucuture is confirmed by Regulus 8230 (HITACHI) 高精細電子顕微鏡 (Ultra-high Resolution Scanning Electron Microscope (SEM)).
結果と考察 / Results and Discussion
The Ag mirror and Si3N4 layer are prepared with the thickness of 100 nm and 220 nm, respectively. The refractive index of the Si3N4 layer, which is highly important for the optical cavity design, is optimized and confirmed. The real part and imaginary part of the Si3N4 refractive index are 2.14 and 0.0014, respectively, at the wavelength of 1550 nm. The plasmonic structure will be fabricated on the top of the Si3N4 layer as the next step.
図・表・数式 / Figures, Tables and Equations
Fig. 1. The measured refractive index n and extinction coefficient k of silicon nitride (SiN) sputtered by CFS-4EP-LL in a linear scale.
Fig. 2. The measured extinction coefficient k of silicon nitride (SiN) sputtered by CFS-4EP-LL in a logarithmic scale.
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
References
1. Adv. Optical Mater. 2021, 9, 2101474
2. Adv. Mater. 2019, 31, 1900763
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件