利用報告書 / User's Report | ARIM Japan公式ホームページ_マテリアル先端リサーチインフラ

【公開日：2023.07.31】【最終更新日：2023.05.09】

課題データ / Project Data

課題番号 / Project Issue Number

22UT1085

利用課題名 / Title

Device applications of one-dimensional heterostructure nanotubes

利用した実施機関 / Support Institute

東京大学

機関外・機関内の利用 / External or Internal Use

内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-

【重要技術領域 / Important Technology Area】（主 / Main）次世代ナノスケールマテリアル/Next-generation nanoscale materials（副 / Sub）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed

キーワード / Keywords

リソグラフィ・露光・描画装置、膜加工・エッチング、形状・形態観察、分析、電気計測,リソグラフィ/Lithography,膜加工・エッチング/Film processing and Etching,ナノエレクトロニクスデバイス/ Nanoelectronics device,ナノチューブ/ Nanotube

利用者と利用形態 / User and Support Type

利用者名（課題申請者）/ User Name (Project Applicant)

丸山茂夫

所属名 / Affiliation

東京大学

共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes

FENG Ya

ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes

利用形態 / Support Type

（主 / Main）機器利用/Equipment Utilization（副 / Sub）-

利用した主な設備 / Equipment Used in This Project

UT-500：高速大面積電子線描画装置
 UT-503：超高速大面積電子線描画装置
 UT-504：光リソグラフィ装置MA-6
UT-504：光リソグラフィ装置MA-6
UT-604：高速シリコン深掘りエッチング装置

報告書データ / Report

概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)

To investigate transport properties and fabricate functional devices of 1D van der Waals heterostructure nanotubes, individual suspended nanotubes are prepared over suspended SiNx beams, enabling study of its transport properties without substrate interference and TEM observation. Furthermore, the suspended hetero-nanotubes would be face transferred onto target chips and fabricated into functional electronic devices.

実験 / Experimental

A marker layer was patterned by EBL (ADVANTEST F5112+VD01) and transferred to SiO₂/Si substrate by RIE (ULVAC CE-300I). The second layer for catalysts was patterned by EBL and then catalyst Co was sputtered onto. The third layer for TEM grids was patterned by photolithography (MA6) from the back, and the exposed area was etched away by RIE and DRIE (SPTS MUC-21) sequentially to release the suspended SiNx frames for individual suspended SWNT growth and later 1D van der Waals heterostructure formation. The as-grown heterostructure nanotubes could be further face transferred onto target chip, and metal connections were patterned by EBL (ADVANTEST F7000S-VD02). The contact metals of 2nm Cr and 30nm Pd were sputtered.

結果と考察 / Results and Discussion

The home-made TEM compatible grid for long individual nanotube growth is schematically shown in Fig. 1(a). The desired individual nanotube in SEM images of Fig. 1(b) and 1(c) is ideal for thermal measurements by Raman opto-thermal technique. The thermal conductivity of the self-bundled nanotube in Fig. 1(c) was decreased.

図・表・数式 / Figures, Tables and Equations

Fig. 1 As-grown individual nanotube on home-made TEM compatible grid.

その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)

成果発表・成果利用 / Publication and Patents

論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)

Ya Feng, Drastically reduced thermal conductivity of self-bundled single-walled carbon nanotube, Carbon, 201, 433-438(2023).
DOI: https://doi.org/10.1016/j.carbon.2022.09.024

口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.

特許 / Patents

特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件