【公開日：2023.07.28】【最終更新日：2023.05.29】
課題データ / Project Data
課題番号 / Project Issue Number
22AT0165
利用課題名 / Title
ミニマルファブにおけるデバイスと成膜の評価
利用した実施機関 / Support Institute
産業技術総合研究所
機関外・機関内の利用 / External or Internal Use
外部利用/External Use
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）その他/Others（副 / Sub）-
キーワード / Keywords
interface SiOx / c-Si, interface state density (Dit), pMOS, effective lifetime, furnace, laser annealing
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
Lozach Mickael
所属名 / Affiliation
Minimal Fab Promoting Organization
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
AT-063：分光エリプソメータ
AT-066：顕微フーリエ変換赤外分光装置(FT-IR)
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
Silicon oxide (SiOx) films and the interface SiOx / c-Si are of particular importance for many electronic devices, such as the complementary metal-oxide-semiconductor (CMOS) devices. Here, pMOS devices are realized by Minimal Fab tools in order to evaluate the silicon oxide films deposited and its interface quality during the entire fabrication process. The evolution of the optical properties by Fourier Transform Infrared (FTIR) and the effective lifetime of minority carriers are investigated as a function of the fabrication process and related with the interface state density (Dit) on fabricated devices. These combined characterizations aim to assess the quality of the silicon oxide film and the interface SiOx / c-Si at an early stage, prior to the entire fabrication process, which will be beneficial for the development and improvement of deposition processes realized by Minimal Fab tools.
実験 / Experimental
During the fabrication process of pMOS devices, the optical properties of silicon oxide gate of 20 nm thick and 65 nm thick are characterized by spectroscopic ellipsometry 【NPF063】and FTIR【NPF066】. The effective lifetime is measured by Semilab WT-2000. Two different silicon oxides are investigated: one with a standard furnace at high temperature, and another one by laser annealing with a careful control of the ramp up and down in temperature.
結果と考察 / Results and Discussion
The experimental reveals that the effective lifetime is decreasing specifically after the BSOG and silicon oxide blocking layer etching, and also during the aluminum contacts deposition and patterning. The absorption properties of SiOx films realized by furnace and by laser are almost identical with a stoichiometry x evaluated over 1.9 for both films by the Si-O stretching mode located about ~1175 cm-1 [1]. The capacitance-voltage (C-V) measurements on fabricated devices also revealed a Dit of the same order about 5×1010 eV-1 cm-2. However, the ID-VG characterizations reveal a current leakage for the devices realized by the standard furnace at high temperature. This indicates the possible presence of deep-level defects in the c-Si wafer near the interface due to the high temperature process that is not generated when using the optimized laser annealing process.
図・表・数式 / Figures, Tables and Equations
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
- Mickael Lozach et al., "Contactless characterization of SiOx/c-Si interface applied to pMOS devices for the development of fabrication processes", International Conference on the Physics of Semiconductors 2022（Sydney）, 2022年6月29日
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件