【公開日：2023.07.28】【最終更新日：2023.05.29】
課題データ / Project Data
課題番号 / Project Issue Number
22AT0159
利用課題名 / Title
Investigation of microstructure, composition and passivation performance of silicon nitride, silicon oxide, and titanium nitride thin films
利用した実施機関 / Support Institute
産業技術総合研究所
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）次世代ナノスケールマテリアル/Next-generation nanoscale materials（副 / Sub）量子・電子制御により革新的な機能を発現するマテリアル/Materials using quantum and electronic control to perform innovative functions
キーワード / Keywords
nanostructure of pillars, electrodes, HSQ
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
陳 国海
所属名 / Affiliation
産業技術総合研究所
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）技術補助/Technical Assistance（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
AT-093：高速電子ビーム描画装置（エリオニクス）
AT-006：マスクレス露光装置
AT-030：プラズマCVD薄膜堆積装置
AT-082：化合物半導体エッチング装置（ICP-RIE）
AT-019：多目的エッチング装置(ICP-RIE)
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
We used e-beam lithography to fabricate nano-sized patterns and then used ICP-RIE to form the nanostructure of pillars used as electrodes.
実験 / Experimental
【利用した主な装置】
高速電子ビーム描画装置(エリオニクス)【NPF093】,マスクレス露光装置【NPF006】,プラズマCVD薄膜堆積装置【NPF030】,化合物半導体エッチング装置(ICP-RIE) 【NPF082】, and 多目的エッチング装置(ICP-RIE) 【NPF019】
【実験方法】
TiNx film was sputtered onto the Si substrate. ICP-RIE was used to etch the TiNx film to form the nano-sized pillar structure used as electrode. To obtain the desired edge profile of these nano-sized pillars, various ICP-RIE recipes were investigated. Some of conditions are listed as below.
ICP-RIE recipe 1: HBr/Ar=30/70sccm, Pressure=5 Pa, ICP/Bias power= 200/150W, Time=40sec.
ICP-RIE recipe 2: Cl2/Ar=20/100sccm, Pressure=1 Pa, ICP/Bias power= 500/80 W, Time= 30sec.
After the formation of pillars, SiO2 film was deposited to burry the structure as inter-layer dielectric using TEOS as source. The NPF standard recipe was used with 10 min of deposition.
結果と考察 / Results and Discussion
Our goal is to fabricate nano-sized pillar structures used on electrode. The size is ranged from 80 nm to 300 nm.
Therefore, we have to use e-beam lithography to form the patterns. As shown in Fig.
1, the HSQ pillars were clearly resolved after adjusting the dose and development
conditions.
Since the feature is so small, etching is too sensitive to control. We
firstly tried HBr/Ar recipe. The plasma seems very unstable. over etch and
under etch happened even using the same recipe (Fig. 2).
Finally,
we switched to Cl2/Ar recipe. Precise control of the etching endpoint is necessary.
For most cases, slightly over etch was obtained which formed a dome like structure
(Fig. 3). Recipe needs to be improved.
図・表・数式 / Figures, Tables and Equations
Fig. 1 HSQ pillars (80, 90, 100, 200, 300nm).
Fig. 2 Over etch and under etch using HBr/Ar recipe.
Fig. 3. Pillars using Cl2/Ar recipe.
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件