【公開日：2023.07.31】【最終更新日：2023.05.17】
課題データ / Project Data
課題番号 / Project Issue Number
22UT0397
利用課題名 / Title
フッ素添加による炭素膜の特性
利用した実施機関 / Support Institute
東京大学
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）その他/Others（副 / Sub）-
キーワード / Keywords
Film structure,電子分光
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
BAE SUMIN
所属名 / Affiliation
東京大学
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
A deposition technique that combines bipolar plasma-based ion implantation and deposition (PBII&D) with magnetron sputtering is used to create films on a Si (100) wafer. In order to understand the film characteristics, XPS analysis was performed.
実験 / Experimental
1. a bipolar
plasma-based ion implantation and deposition (PBII&D) is used to create
films on a Si (100) wafer. Prior to deposition, the substrates are cleaned in
an ultrasonic bath with acetone, ethyl alcohol, and deionized water, and then
air-dried to remove surface contaminants. The deposition process consists of
three steps: 1) Ar-H cleaning, 2) deposition of an interlayer, and 3)
deposition of a toplayer. To enhance adhesion between the substrate and the
coating, the oxide layer on the surface is removed through pre-sputtering with
Ar flow for 15 minutes using pulsed voltages of +1.5/-5.0 kV. Next, a Si-DLC
adhesion layer is deposited for 10 minutes using hexamethyldisilazane (HMDS)
gas flow of 20 sccm and pulsed voltages of +1.2/-3.0 kV. Finally, the DLC layer
is fabricated by flowing methane (CH4) gas at 20 sccm with pulsed power of +1.5/-5.0
kV. In the case of F-doped DLC, it uses Hexafluorobenzene (HFB) of 20 sccm.
2. The XPS spectra are obtained using a
monochromatized Al Kα X-ray source (1486.6 eV) at an electron take-off angle of 45°. The X-ray power is set at 25 W with a spot size of 100 μm. Scans are collected with a pass energy of 23.5 eV and an energy
step of 0.1 eV. The atmospheric pressure in the chamber is maintained at
approximately 1x10-6 Pa during the measurements. Charge effects are minimized
through charge neutralization, and any remaining charge effects are calibrated
using the C 1s core level signal at 284.8 eV. Each acquisition is accumulated
10 times to obtain an averaged scan. CasaXPS software is employed for peak
fitting, with the baseline created using the Shirley method, and the spectra
deconvoluted using a sum of Gaussian (80%) and Lorentzian (20%) functions.
結果と考察 / Results and Discussion
The quantification of elemental species was determined on the appropriate sensitivity factors extracted. The F content of the a-C:F films, as they were deposited, varied based on the negative bias voltage applied during the deposition process. It was observed that the F content consistently decreased as the negative pulse voltage increased.
図・表・数式 / Figures, Tables and Equations
XPS spectrums of DLC and F-DLCs in C 1s
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件