利用報告書 / User's Report

【公開日:2023.07.31】【最終更新日:2023.05.30】

課題データ / Project Data

課題番号 / Project Issue Number

22UT0320

利用課題名 / Title

炭素膜内のクロム結晶化分析

利用した実施機関 / Support Institute

東京大学

機関外・機関内の利用 / External or Internal Use

内部利用(ARIM事業参画者以外)/Internal Use (by non ARIM members)

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】(主 / Main)計測・分析/Advanced Characterization(副 / Sub)-

【重要技術領域 / Important Technology Area】(主 / Main)その他/Others(副 / Sub)次世代ナノスケールマテリアル/Next-generation nanoscale materials

キーワード / Keywords

XPS, Film structure, Carbide, DLC,X線回折/X-ray diffraction,電子分光


利用者と利用形態 / User and Support Type

利用者名(課題申請者)/ User Name (Project Applicant)

BAE SUMIN

所属名 / Affiliation

東京大学

共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes

府川和弘,飯盛桂子

利用形態 / Support Type

(主 / Main)技術補助/Technical Assistance(副 / Sub),機器利用/Equipment Utilization


利用した主な設備 / Equipment Used in This Project

UT-301:多機能走査型X線光電子分光分析装置(XPS)
UT-202:高輝度In-plane型X線回折装置


報告書データ / Report

概要(目的・用途・実施内容)/ Abstract (Aim, Use Applications and Contents)

To analyze the bonding structure in the fabricated films.The results showed Cr exists in its pure metallic form in the low Cr content, however, it started forming the carbide when it reaches at Cr 20 at.%.All the prepared films have different tribological properties. 

実験 / Experimental

To understand the bonding structure of the prepared films, XPS analysis was performed.The measurement conditions were as follows:a monochromatized Al Kα X-ray source (1486.6 eV) an electron take-off angle of 45°. The X-ray power of 25 W a spot size of 100 μm, etc

結果と考察 / Results and Discussion

In Cr 2.79 at.%, there was no carbide sign in C 1s spectrum, however, weak Cr peaks could be identified in Cr 2p spectrum. According to the previous research, it indiciates that Cr does not form its carbide and exists in the coating as a nanoparticles [1]. The carbide starts to be formed from Cr 20.77 at.%, by confirming carbide peak in C 1s spectrum, and invertestingly, in Cr 56.75 at.%, no C-C bonding was identified, which means that the film with high Cr content is almost made of Cr carbide.

図・表・数式 / Figures, Tables and Equations


XPS spectrum of Cr-DLC; it shows the formation of Cr carbide.


その他・特記事項(参考文献・謝辞等) / Remarks(References and Acknowledgements)

[1] GASSNER, Gert, et al. Structure of sputtered nanocomposite Cr C x∕ a-C: H thin films. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006, 24.4: 1837-1843.


成果発表・成果利用 / Publication and Patents

論文・プロシーディング(DOIのあるもの) / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents

特許出願件数 / Number of Patent Applications:0件
特許登録件数 / Number of Registered Patents:0件

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