【公開日：2023.07.31】【最終更新日：2023.05.13】
課題データ / Project Data
課題番号 / Project Issue Number
22UT0214
利用課題名 / Title
エンジンの摩擦低減に関する研究
利用した実施機関 / Support Institute
東京大学
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）その他/Others（副 / Sub）-
キーワード / Keywords
Film structure, Carbide, DLC,X線回折/X-ray diffraction
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
BAE Sumin
所属名 / Affiliation
東京大学
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
A hybridized deposition technique consisted of a bipolar plasma-based ion implantation and deposition (PBII&D) and a magnetron sputtering is used to prepare the films onto a Si (100) wafer. To observe the formation of metallic crystallinity, XRD measurement was conducted. The results revealed that broad spectrums centered at 40 degree was acquired, and it is noted that no sharp peaks visible in the spectrums and the films can therefore be regarded as x-ray amorphous.
実験 / Experimental
1. DepositionA hybridized
deposition technique consisted of a bipolar plasma-based ion implantation and
deposition (PBII&D) and a magnetron sputtering is used to prepare the
films. The films are fabricated onto a Si
(100) wafer. To eliminate contaminants on the surface, the substrates are cleaned
in an ultrasonic bath for 20 min with acetone, ethyl alcohol and deionized
water in order, and air-dried before introducing into the vacuum chamber. The deposition
is parted into three steps: 1) Ar cleaning, 2) deposition of interlayer and 3)
toplayer. To improve the adhesion between the substrate and the coating,
firstly, the oxide layer on the surface is removed by a pre-sputtering for 15
min using an Ar flow of 20 sccm with pulsed voltages of +1.2/-3.0 kV. Next, the
deposition of Si-DLC as an adhesion layer is followed for 10 min. The gas flow is
hexamethyldisilazane (HMDS) of 20 sccm and the pulsed voltages are +1.2/-3.0
kV. Finally, DLC is fabricated. A methane (CH4) of 20 sccm is flowed
to the chamber with pulsed power of +1.0/-1.0 kV. In case of Cr-doped DLC, the
PBII&D and magnetron sputtering are utilized at once. A 99.9% pure chromium
target is sputtered to incorporate the metal element into DLC. The content of
Cr is adjusted by varying Ar and CH4 ratio, and their total flow
rate is controlled to have 20 sccm. The deposition period is adjusted to have a
thickness of ~1 μm, and its measurement is carried out using a 2D profiler.
2. XRDThe crystal structure of the deposited
films was investigated using a diffractometer with parallel beam geometry. The diffractometer
was operated in grazing incidence mode of 1 to optimize the signal ratio
between the film and substrate.
結果と考察 / Results and Discussion
The figure shows X-ray diffractograms for Cr-C films with different Cr contents analyzed using identical parameters. For all samples, a broad feature is visible at about 40degree. It can also be noted that the intensity of the feature at Cr 2.79 at. % is reduced, due the lower scattering factor. There are no sharp peaks visible in the spectrum and the films can therefore be regarded as x-ray amorphous.
図・表・数式 / Figures, Tables and Equations
XRD signal to indicate the formation of carbide according to Cr content
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件