【公開日：2023.07.31】【最終更新日：2023.05.30】
課題データ / Project Data
課題番号 / Project Issue Number
22UT0174
利用課題名 / Title
Al2O3の表面分析
利用した実施機関 / Support Institute
東京大学
機関外・機関内の利用 / External or Internal Use
外部利用/External Use
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）その他/Others（副 / Sub）-
キーワード / Keywords
アルミナ,表面,赤外・可視・紫外分光/Infrared and UV and visible light spectroscopy
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
王 俊沙
所属名 / Affiliation
電子実装工学研究所
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
須賀唯知
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
小西邦昭
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
Because of the excellent dielectric properties, thermal and chemical stability, and strong adhesion to many surfaces, Al2O3 is widely used as an insulating material for gate dielectrics, protective coatings and tunneling barriers. Atomic Layer Deposition (ALD) is an advanced deposition technique that allows for ultra-thin films of a few nanometers to be deposited in a precisely controlled way. Al2O3 film deposited by ALD is smooth and uniform. Therefore, they can be used for bonding to other surfaces directly.
実験 / Experimental
Al2O3 films were deposited on 4-inch Si wafers by O2 plasma enhanced atomic layer deposition (PEALD). The deposition parameters are shown in Table 1. After deposition, the thickness and refractive index of films were measured by an ellipsometer, and effects of O2 plasma power and additional H2 plasma post-treatment on the results were investigated.
結果と考察 / Results and Discussion
The influence of O2 plasma power and additional H2
plasma post-treatment on the
thickness of Al2O3 films is shown in Fig. 1. Compared to
the standard process, the thickness of films deposited at high power increased,
while that of films post-treated H2
plasma decreased. It is noted that after the films were treated by H2
plasma, the thickness in the center and edge differed slightly.
The effect of O2 plasma power and H2 plasma
post-treatment on the refractive index of Al2O3 films
is shown in Fig. 2. The refractive index of Al2O3 films could
be improved slightly by higher O2
plasma power, and the refractive
index in the wafer center and edge were almost the same. H2 plasma post-treatment could increase the
refractive index of Al2O3 films
greatly. However, the difference in different position of wafers was also
expanded.
図・表・数式 / Figures, Tables and Equations
Table. 1 Deposition parameters of different ADL Al2O3 films
Fig. 1 Thickness of different A2O3 films
Fig. 2 Refractive index of different A2O3 films
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
We would like to express our sincere thanks to Showa Shinku Co., Ltd for the deposition of ALD Al2O3 films.
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
-
Junsha Wang, Surface activated bonding of ALD Al2O3 films, Japanese Journal of Applied Physics, 62, SC1081(2023).
DOI: 10.35848/1347-4065/acb656
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
- J. Wang, R. Takigawa, T. Suga, "Surface activated bonding of ALD Al2O3 films", 第31回マイクロエレクトロニクスシンポジウム（大阪）, 令和4年9月6日
- J. Wang, R. Takigawa, T. Suga, "Surface activated bonding of ALD Al2O3 films", 11th IEEE CPMT Symposium Japan（京都）, 令和4年11月10日
- J. Wang, R. Takigawa, T. Suga, "Surface activated bonding of ALD Al2O3 films", 2022 International Conference on Solid State Devices and Materials（千葉）, 令和4年9月27日
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件