【公開日：2023.07.31】【最終更新日：2023.05.11】
課題データ / Project Data
課題番号 / Project Issue Number
22UT0159
利用課題名 / Title
(111) Ge-on-Insulator Structure and Extremly-thin-body nMOSFETs
利用した実施機関 / Support Institute
東京大学 / Tokyo Univ.
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed（副 / Sub）量子・電子制御により革新的な機能を発現するマテリアル/Materials using quantum and electronic control to perform innovative functions
キーワード / Keywords
膜加工・エッチング/Film processing and Etching,赤外・可視・紫外分光/Infrared and UV and visible light spectroscopy,ナノエレクトロニクスデバイス/ Nanoelectronics device,表面・界面・粒界制御/ Surface/interface/grain boundary control
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
韓 雪揚
所属名 / Affiliation
東京大学
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
Ge is a promising channel material for its high theoretical hole and electron mobility. Extremely-thin body (ETB) Ge-on-Insulator (GOI) is a very promising structure in scaled MOSFET device for strong immunity to the short channel effects (SCEs). In order to realize Ge based CMOS devices, GOI nMOSFET performance enhancement is indispensable. Ge channel with (111) surface orientation is supposed to achieve the highest electron mobility in ETB region, due to the strong immunity to the surface roughness scattering. Accordingly, this research is carried out to experimentally achieve the high-performance ETB (111) GOI nMOSFET. In order to precisely control the ETB channel, high accuracy spectroscopic ellipsometry is strongly needed in this work to acquire the accurate GOI thickness.
実験 / Experimental
Ellipsometry is an optical technique for investigating the dielectric properties of thin films. Figure 1 shows the schematic setup of an ellipsometry system, it mainly measures the polarization phase of the electromagnetic wave reflected by the sample. By using the GOI stack related dielectric parameters and the polarization measured data, we can calculate the GOI thin film thickness precisely by fitting. Its non-contact and non-destructive properties are important for my subsequent experiment. By using spectroscopic ellipsometry equipment in Takeda Building, I successfully evaluated the GOI film thickness varying from 80nm to 2nm.
結果と考察 / Results and Discussion
By using spectroscopic ellipsometry, different thickness of GOI thin film with range from 80nm to 2nm of wafer bonded GOI are successfully achieved and accurately evaluated. The fabrication of ETB (111) GOI nMOSFET is now undergoing.
図・表・数式 / Figures, Tables and Equations
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
本研究の一部は、科学研究費補助金 (17H06148)の支援により実施した。
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
-
Xueyang Han, Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al2O3/plasma oxidation GeO
x
/(111) and (100) n-Ge MOS structures, Japanese Journal of Applied Physics, 62, SC1089(2023).
DOI: 10.35848/1347-4065/acbb89
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
- X. Han, C.-T. Chen, M. Ke, Z. Zhao, K. Toprasertpong, M. Takenaka, and S. Takagi, “Impacts of Annealing Temperature and Atmosphere on (111) and (100) n-Ge MOS Interface Properties with Plasma Oxidation GeOx and ALD Al2O3”, G-10-04, 2022 International Conference on Solid State Devices and Materials (SSDM), Makuhari, Chiba, September 26-29, 2022.
- X. Han, C.-T. Chen, M. Ke, Z. Zhao, K. Toprasertpong, M. Takenaka, and S. Takagi, “(100) and (111) n-Ge/GeOx/Al2O3 MOS Interface Properties with Different Annealing Temperature and Atmosphere”, 第83回応用物理学会秋季学術講演会, 23p-C102-9, 東北大学 川内北キャンパス+オンライン, 2022年9月20-23日.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件