【公開日：2023.07.31】【最終更新日：2023.05.23】
課題データ / Project Data
課題番号 / Project Issue Number
22UT0060
利用課題名 / Title
表面活性化常温接合
利用した実施機関 / Support Institute
東京大学
機関外・機関内の利用 / External or Internal Use
外部利用/External Use
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）加工・デバイスプロセス/Nanofabrication
【重要技術領域 / Important Technology Area】（主 / Main）その他/Others（副 / Sub）-
キーワード / Keywords
AFM, Fast Atom Beam, Thermocompression, Shear Strength,走査プローブ顕微鏡/Scanning probe microscopy,スパッタリング/Sputtering
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
Martinez Nora
所属名 / Affiliation
明星大学
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
UT-307：走査型プローブ顕微鏡
UT-711：LL式高密度汎用スパッタリング装置(2019)
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
Surface activation-assisted thermocompression bonding of dissimilar substrates is being evaluated. To ensure a strong enough bonding, the substrate surface flatness plays a crucial role. On account of this, the surface roughness of graphite and Gallium Nitride (GaN) substrates were measured by means of a L-trace II Atomic Force Microscope (AFM). Next, the samples were Ti and Au metal deposited using a CFS-4EP-LL sputtering device. The bonding results are being evaluated to determine the optimal conditions for joining two substrate surfaces by using Ar-FAB surface activation-assisted thermocompression method.
実験 / Experimental
Firstly, the surface roughness of graphite (8mm2) and GaN (5mm2) plates were measured with an AFM microscope and after that the samples were Ti and Au metal deposited using a CFS-4EP-LL sputtering machine at 200 W and 23 sccm of Ar flow rate conditions. Next, the Ar-FAB surface activation was performed under 1 kV, 20 sccm of Ar flow rate and 10 minutes experimental conditions. Finally, thermocompression was carried out employing a hot press machine at various temperature, load pressure, and time conditions.
結果と考察 / Results and Discussion
The roughness average (Ra) values before sputtering for GaN were 2.13 nm (RMS: 3.3 nm), and for graphite substrate surfaces varied between 7.0 nm (RMS: 9.23 nm) to 8.8 nm (RMS: 11.6 nm). The surface roughness of GaN samples indicated to be smaller than that of graphite. Also, an Au sputter-deposited graphite sample was measured (50 µm2 area), showing 6.88 nm (Ra) and 8.73 nm (RMS) values (Fig. 1). The Au sputter-deposited graphite and GaN substrates' Ar-FAB-assisted thermocompression bonding results are still being probed to obtain well-adhered surfaces. Since an optimal surface roughness of a sample for room temperature surface activated bonding is around 3 nm, we consider that the present surface roughness values could be good enough to achieve well-adhered dissimilar surfaces. Experiments are still going on.
図・表・数式 / Figures, Tables and Equations
Fig. 1 Au sputter-deposited graphite surface roughness
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
This experiment was conducted as part of the Ministry of Internal Affairs and Communications’ research and development (JP215006003) on low-thermal resistance of GaN transistors that realize ultra-high-speed, large-capacity, ultra-low power consumption base station amplifiers and construction of a thermoelectric integrated analysis platform.
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件