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件名3rd ImPACT International Symposium on Spintronic Memory, Circuit and Storage
開始日時2017/09/23 00:00
終了日時2017/09/26 00:00
場所Qatar Science Campus Hall, Aobayama Campus, Tohoku University, Miyagi, Japan
連絡先impact(at)jst.go.jp
詳細 The main subject of this symposium is to open the door for New Technology Trends, that is to say, Advancing "Emerging Nonvolatile-Memory" Technologies and their application to cyber physical systems (CPS), the internet of things (IoT), data science, deep learning and so on. Moreover, we discuss the substantial challenge to implement extremely high speed and integration in the next generation nonvolatile-memories.

Program:
Topic 1 New technology trends including the nonvolatile-memories interlock, many of them depending on the advancement of other technologies in order to move forward.
Topic 2 Readied for STT-MRAM manufacturing.
Topic 3 R& D topics in ImPACT and the related studies
Poster presentation

Organizers:
 The Japan Science and Technology Agency (JST)
 Cabinet Office, Government of Japan

Please go to the following URL for more information.
URL
http://www.jst.go.jp/impact/sahashi/symposium/