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件名【SISPAD 2017】International Conference on Simulation of Semiconductor Processes and Devices
開始日時2017/09/07 00:00
終了日時2017/09/10 00:00
場所Kamakura Prince Hotel, Kanagawa, Japan
連絡先kamakura(at)si.eei.eng.osaka-u.ac.jp
詳細Topics:
*Modeling and simulation of all sorts of semiconductor devices, including FinFETs,
 GAA FETs, ultra-thin SOI devices, emerging memory devices, new-material-based
 nanodevices, optoelectronic devices, TFTs, sensors, power electronic devices,
 spintronic devices, tunnel FETs, SETs, organic electronic devices, and bioelectronic
 devices
*Modeling and simulation of all sorts of semiconductor processes, including first-
 principles material design and growth simulation of nano-scale fabrication
*Fundamental aspects of device modeling and simulation, including quantum transport,
 thermal transport, fluctuation, noise, and reliability
*Compact modeling for circuit simulation, including low-power, high frequency, and
 power electronics applications
*Process/device/circuit co-simulation in context with system design and verification
*Equipment, topography, lithography modeling
*Interconnect modeling, including noise and parasitic effects
*Numerical methods and algorithms, including grid generation, user-interface, and
 visualization
*Metrology for the modeling of semiconductor devices and processes

【Sponsor】
Japan Society of Applied Physics - JSA
IEEE Electron Devices Society

【Deadline for submission of abstract】April 3, 2017

Please go to the following URL for more information.
【URL】
https://sites.google.com/site/sispad2017/
https://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=40646